IXTY02N50D

Vgs(th) (Max) @ Id:	--
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	TO-252, (D-Pak)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1.1W (Ta), 25W (Tc)
FET Feature:	Depletion Mode
Input Capacitance (Ciss) (Max) @ Vds:	120pF @ 25V
Vgs (Max):	±20V
Series:	--
Rds On (Max) @ Id, Vgs:	30 Ohm @ 50mA, 0V
Drive Voltage (Max Rds On, Min Rds On):	--
Current - Continuous Drain (Id) @ 25°C:	200mA (Tc)
Drain to Source Voltage (Vdss):	500V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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Introduction

IXTY02N50D is a type of Planar field effect transistor (PFET) integrated circuit (IC). It is a type of single-gate FET, also known as a Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It is used in many different applications and is particularly popular for its automation functions. The IXTY02N50D has three terminals, the source (S), the gate (G) and the drain (D). These terminals are the main components of this type of transistor and determine its operation.

Application Fields

The IXTY02N50D is primarily used in power management situations. It is often used to control and adjust the flow of electric current through a circuit, usually with one or more integrated circuits (IC). This transistor is used to regulate the voltage and current level in power systems, allowing appropriate levels of input and output.The IXTY02N50D is also used in motor control applications, enabling it to automatically adjust the speed of a motor. In audio-related applications, the IXTY02N50D can be used to regulate the power supply for amplifiers and speakers, as well as to regulate the volume. In sensing applications, it can be used to detect changes in temperature or other physical forces.

Working Principle

The IXTY02N50D operates in a similar way to an ordinary FET, using an electric field to control the amount of current flowing through the device. The source and drain terminals are connected to the component’s two main electrical inputs, while the gate terminal is connected to the component’s main output. The main purpose of the gate is to modulate the current flowing through the component by adjusting the electric field across its terminals.The controlled flow of current is achieved by applying a voltage -Vgs (gate to source) across the component’s gate and source terminals. This voltage creates an electric field which modulates the flow of current between the source and drain. The field strength of this electric field is determined by the magnitude of the applied voltage -Vgs. Applying a higher voltage -Vgs results in more current flowing, while applying a lower voltage results in less current flowing.When the voltage -Vgs is sufficiently high, the IXTY02N50D will become saturated. In this state, the current flow through the component is determined solely by the voltage Vds (drain to source) across the devices drain and source terminals.

Conclusion

The IXTY02N50D is a type of single-gate field effect transistor (FET) that is used in many different application fields. It’s primary use is in power management situations, where it can be used to control the power output level of circuits and components. It is also used in motor control applications, as well as audio regulation applications.The IXTY02N50D operates by applying a voltage -Vgs (gate to source) across the component’s gate and source terminals, which creates an electric field to control the flow of current from the source to the drain. By adjusting the strength of the electric field, current flow can be controlled. When the voltage -Vgs is sufficiently high, the current flow will be determined solely by the voltage Vds (drain to source) across the device’s drain and source terminals.

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