IXTY8N70X2

Vgs(th) (Max) @ Id:	5V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	TO-252
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	150W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	800pF @ 10V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	12nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	500 mOhm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	8A (Tc)
Drain to Source Voltage (Vdss):	700V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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IXTY8N70X2 Application Field and Working Principle

IXTY8N70X2 is a type of single insulating-gate field-effect transistors, or IG-FETs, developed by IXYS Corporation. The purpose of using this type of transistors is to create high-speed switches in applications such as current amplification and signal transmission. In terms of their structure, IXTY8N70X2 FETs feature a dielectric layer of silicon dioxide, or SiO2, fabricated on a semiconductor substrate.

Advantages of IXTY8N70X2

One of the main advantages of IXTY8N70X2 FETs is their ability to provide several times the current of an equivalent bipolar transistor, meaning that the required power consumption is considerably lower. In addition to this, switching times at a given power frequency are much faster than those of their bipolar counterparts. Furthermore, they are free from the effects of thermal runaway that can occur in bipolar transistors, making the IXTY8N70X2 FETs much more reliable.

Working Principle

The primary component of the IXTY8N70X2 FET is the gate, which is an insulated conducting material sitting in between the semiconductor substrate and the dielectric layer of SiO2. When a positive voltage is applied to the gate, it creates a potential barrier, which increases in height as the gate voltage is increased. This makes it difficult for electrons to pass into the substrate, reducing the current that can flow through the device. This effect is known as “depletion mode”.Conversely, if a negative voltage is applied to the gate, it creates a region of enhanced conduction. This reduces the potential barrier and makes it easier for electrons to flow into the substrate. This effect is known as “enhancement mode”.

Applications of IXTY8N70X2

IXTY8N70X2 FETs are mainly used in telecom, industrial, computer and audio-video applications. They are especially beneficial in applications demanding high-speed signal switching, because of their exceptionally low on-state resistance. They can also be used in applications requiring power control, since they offer excellent current regulating abilities.Another important use of IXTY8N70X2 FETs is in power frequency switches, as they can be efficiently switched on or off at very high speeds. A notable example of this type of application is in computer AC/DC rectifiers. In addition, IXTY8N70X2 FETs are often used in high-speed amplifier applications, where their high current capabilities and low switching times make them extremely useful.

Conclusion

In conclusion, IXTY8N70X2 single insulated gate field-effect transistors are an invaluable type of semiconductor device with capabilities that make them an ideal choice for many high-speed applications. They offer a number of advantages over alternative types of transistors, such as high current capabilities, fast switching times, and low power consumption. They are used extensively in applications such as signal switching, power control and amplifier systems, and their reliability and durability make them suitable for long-term use.

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