IXTY08N100D2

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IXTY08N100D2 is a high power insulated gate bipolar transistor (IGBT). It is designed for use with very low off-state voltage, and is designed to handle large amount of current. It is an excellent choice for applications such as electric motors, generators, medical equipment, and electric vehicles. This article will discuss the application field and working principle of the IXTY08N100D2.

The IXTY08N100D2 is a high voltage insulated gate bipolar transistor (IGBT) with a rated collector-emitter voltage of 800 volts. It is designed to handle up to 400 amps of collector current and is suitable for use in a variety of applications. The IGBT has a positive temperature coefficient, which helps to reduce off-state leakage currents, and it is protected against short-circuit and thermal runaway.

The IXTY08N100D2 is an excellent choice for applications that require high power switching, such as motor control, power electronics, industrial drives, UPS systems, renewable energy, and high voltage inverters. It is also suitable for use in acoustic equipment and automotive applications. The IXTY08N100D2 is also well suited for low-side switching, pre-charging operations, as well as for high-side switching in isolated gate applications.

The IXTY08N100D2 is an N-channel MOSFET, which is a type of field-effect transistor (FET). A MOSFET is a voltage-controlled device that can be used to control the direction and magnitude of electrical current. It is a semiconductor device made up of two regions: a source connection and a gate connection. The gate connection acts as a switch, allowing current to flow through the transistor when the voltage at the gate is increased, and blocking it when the voltage is reduced.

The IXTY08N100D2 operates on a principle known as the ‘depletion layer’. When the gate voltage is at a low level, it creates an electric field that attracts charge carriers from the source to the drain. This forms a depletion layer at the source-drain junction. When the gate voltage is increased, the charge carriers in the depletion layer are repelled back to the source terminal, allowing current to flow from the source to the drain.

The IXTY08N100D2 has excellent power and temperature characteristics, making it an ideal choice for many applications. It is rated for up to 400 amps of collector current and is suitable for use in a variety of applications. The device is also protected against short-circuit and thermal runaway, ensuring safe operation and long-term reliability. The IXTY08N100D2 is an economical, efficient, and reliable solution for a variety of high power switching applications.

The specific data is subject to PDF, and the above content is for reference