| Allicdata Part #: | IXTY1R6N50D2-ND |
| Manufacturer Part#: |
IXTY1R6N50D2 |
| Price: | $ 1.83 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 500V 1.6A DPAK |
| More Detail: | N-Channel 500V 1.6A (Tc) 100W (Tc) Surface Mount T... |
| DataSheet: |  IXTY1R6N50D2 Datasheet/PDF |
| Quantity: | 1728 |
| 1 +: | $ 1.66320 |
| 70 +: | $ 1.34037 |
| 140 +: | $ 1.20632 |
| 560 +: | $ 0.93822 |
| 1050 +: | $ 0.77739 |
| Vgs(th) (Max) @ Id: | -- |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | TO-252, (D-Pak) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 100W (Tc) |
| FET Feature: | Depletion Mode |
| Input Capacitance (Ciss) (Max) @ Vds: | 645pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 23.7nC @ 5V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 2.3 Ohm @ 800mA, 0V |
| Drive Voltage (Max Rds On, Min Rds On): | -- |
| Current - Continuous Drain (Id) @ 25°C: | 1.6A (Tc) |
| Drain to Source Voltage (Vdss): | 500V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IXTY1R6N50D2 field effect transistor (FET) is a new type of device that utilizes a reverse-biased electrical field to control current flow in an electronic circuit. This device is classified as a single MOSFET (metal-oxide-semiconductor-field effect transistor) due to its single-terminal, reverse-biased gate electrode. The IXTY1R6N50D2 is an enhancement mode device, meaning that it can operate in either an N-channel (i.e., conductive) mode or a P-channel (non-conductive) mode depending upon the voltage applied to the gate.
The working principle of the IXTY1R6N50D2 is based on the charge carriers in a reverse-biased electrical field. When a reverse electrical field is created by applying a voltage between the drain and the source, the electrons (in an N-channel) or the holes (in a P-channel) at the interface between the oxide layer and the semiconductor will be pulled towards the drain and source contact. This creates an accumulation region, near the gate electrode, which can be you used to control the current flowing through the device.
The IXTY1R6N50D2 has a number of applications in electronic circuits and systems. For example, it can be used as a voltage switch, controlling current flow between the drain and source contacts as a function of the voltage applied to the gate. The IXTY1R6N50D2 can also be used as a digital switch, with the gate voltage used to logical high or low states (1 or 0) depending on the state of the gate voltage. The IXTY1R6N50D2 can also be used as an amplifier, with the gate voltage used to control the output voltage, allowing for the amplification of signals.
The IXTY1R6N50D2 is an important device in the electronic world, due to its capability to control the flow of current in an electronic circuit. Its reverse-biased electrical field is a unique feature that allows it to be used in both N and P channel configurations, enabling a wide range of applications. The IXTY1R6N50D2 is capable of amplifying signals, switching circuits as a digital signal, and performing as a voltage switch.
The specific data is subject to PDF, and the above content is for reference
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