| Allicdata Part #: | IXTY12N06TTRLTR-ND |
| Manufacturer Part#: |
IXTY12N06TTRL |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 60V 12A TO-252 |
| More Detail: | N-Channel 60V 12A (Tc) 33W (Tc) Surface Mount TO-2... |
| DataSheet: |  IXTY12N06TTRL Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 4V @ 25µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | TO-252 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 33W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 256pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 3.4nC @ 10V |
| Series: | TrenchMV™ |
| Rds On (Max) @ Id, Vgs: | 85 mOhm @ 6A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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The IXTY12N06TTRL is a powerful, efficient, and versatile Insulated Gate Bipolar Transistor (IGBT) module. It is a useful device for many different applications with a wide range of input and output power ratings. The device has a variety of features that make it suitable for many different applications, and a good understanding of its applications and working principle can help engineers choose the right device for their applications.
The IXTY12N06TTRL is an insulated-gate bipolar transistor module. It is composed of an N-channel MOSFET and an insulated-gate bipolar transistor (IGBT). An IGBT is a power semiconductor device that is used to control voltage and current in electronic circuits. It can also be used as a switch, allowing the user to control the flow of electrons in a circuit to create a desirable output.
The IXTY12N06TTRL has a wide power range, making it suitable for different applications, such as motor drives, welding, solar and renewable energy, automotive, telecom, and aviation. The device has a wide working range, from 500V to 6500V, and can handle up to 12A of output current. The device is also highly efficient, with a low power dissipation rating of only 3mW/device/A. Furthermore, the IXTY12N06TTRL can operate at high speeds, with a switching frequency of up to 1 MHz. The device is constructed with a low-profile baseplate, making it easier to install in tight spaces.
The IXTY12N06TTRL works by controlling the flow of electrons in a circuit. It is designed to when a voltage is applied to its gate, the voltage across the IGBT is modulated by the gate voltage, which in turn regulates the flow of electrons in the circuit. This allows the user to control the state of the device, and allows it to be used as both an on/off switch and as a variable resistor. For example, the IXTY12N06TTRL can be used for motor control, allowing the user to control the speed of the motor without affecting its performance.
The IXTY12N06TTRL is a powerful and versatile IGBT module that can be used for a variety of applications. Its wide power range and efficiency make it an ideal choice for many different applications. The device\'s ability to modulate the flow of electrons lets it be used as both an on/off switch and as a variable resistor, giving it a wide range of potential applications. With a good understanding of its applications and working principle, engineers can easily find a device that fits their needs.
The specific data is subject to PDF, and the above content is for reference
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