Allicdata Part #: | IXTY5N50P-ND |
Manufacturer Part#: |
IXTY5N50P |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 500V 4.8A TO-252AA |
More Detail: | N-Channel 500V 4.8A (Tc) 89W (Tc) Surface Mount TO... |
DataSheet: | IXTY5N50P Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5.5V @ 50µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 89W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 620pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 12.6nC @ 10V |
Series: | PolarHV™ |
Rds On (Max) @ Id, Vgs: | 1.4 Ohm @ 2.4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4.8A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IXTY5N50P is one of the most efficient, advanced power MOSFETs on the market today. The IXTY5N50P is a low-voltage single-pole, single-throw (SPST) power MOSFET. This type of transistor is often used in a variety of applications such as power supply and motor control, high-speed switching, power switching, and power conversion. Though it is an extremely versatile semiconductor device, it is important to understand the application and the basic principles behind how it works.
To begin, the IXTY5N50P is a N-Channel enhancement-mode power MOSFET. This means that this type of transistor requires an additional voltage applied to its gate terminal in order to activate its current flow. When the gate voltage is applied, current will flow from the source to the drain region. The effective output impedance is determined by the gate to source voltage, Vgs, and the drain current delivery capability given by ID (max).
The IXTY5N50P also features a positive temperature coefficient for drain-to-source current, which helps to protect the device from thermal runaway and provides greater stability at high temperatures. This temperature coefficient allows the IXTY5N50P to operate reliably over a wide range of temperatures from -50 ˚C to 150 ˚C. The IXTY5N50P can handle up to 50 volts of peak drain-to-sourcevoltage, Vds, and can deliver up to 9 amps of forward drain current, Id. The on-state drain current is an impressive 5 amps, with a typical turn-on time of less than 10 nanoseconds.
The IXTY5N50P has a wide range of applications, primarily in power supplies and motor control. With its low on-state impedance and low switching noise, the IXTY5N50P is perfect for applications that require high efficiency and low loss, such as switchingpower supplies. It is also useful in motor control applications where high-speed isolating switch must be used. The IXTY5N50P is commonly used in switching, logic level, and surge protection circuits. It is also used in audio power amplifiers, AC drives, and DC/DC converters.
To summarize, the IXTY5N50P is a highly efficient and advanced power MOSFET transistor. It is a low-voltage, N-Channel enhancement-mode power MOSFET, with a positive temperature coefficient for drain-to-source current. The IXTY5N50P is suitable for high-power, high-speed switching, power switching, power conversion, and other similar applications. It features low on-state impedance and low switching noise, and can handle up to 50 volts of peak drain-to-source voltage and up to 9 amps of forward drain current. With its excellent performance and high efficiency, the IXTY5N50P is an ideal choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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