| Allicdata Part #: | IXTY1N120P-ND |
| Manufacturer Part#: |
IXTY1N120P |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 1200V 1A TO-252 |
| More Detail: | N-Channel 1200V 1A (Tc) Surface Mount TO-252, (D-... |
| DataSheet: |  IXTY1N120P Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Series: | -- |
| Packaging: | Tube |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 1200V |
| Current - Continuous Drain (Id) @ 25°C: | 1A (Tc) |
| Rds On (Max) @ Id, Vgs: | -- |
| Vgs(th) (Max) @ Id: | -- |
| FET Feature: | -- |
| Power Dissipation (Max): | -- |
| Operating Temperature: | -- |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | TO-252, (D-Pak) |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Description
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IXTY1N120P is a type of Insulated Gate Bipolar Transistor or IGBT. It is an electronic switch used in many applications including motor control, power control and motor switching. IGBTs combine the high input impedance of a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) with the low on-state drop and high switching speed of a bipolar junction transistor. The IXTY1N120P has a feature that makes it unique from other IGBTs, which is its wide reverse voltage blocking capability. As such, the IXTY1N120P is particularly suitable for applications that require higher voltage handling capability, such as high-voltage motor control.The IXTY1N120P provides several benefits for applications that require a high-voltage IGBT. The first advantage is its wide reverse voltage blocking capability compared to standard IGBTs. This allows the IXTY1N120P to handle higher voltages without sacrificing power, efficiency or reliability. It also offers a fast switching speed, which is important for high voltage applications as it ensures that the IGBT can switch quickly enough in order to maintain control over the power it is providing or receiving. Additionally, the IXTY1N120P has a low on-state resistance, which ensures that power is not wasted when the IGBT is switched on.The IXTY1N120P is usually used in applications that require higher voltage handling capabilities. This could be a high voltage motor control system or a high voltage power controller. It is also commonly used in switching applications, where it is used to switch between high voltages quickly and reliably. In addition, it can be used in power control circuits where it is used to regulate the current or voltage in a circuit by allowing or blocking the flow of power.The working principle of the IXTY1N120P is relatively simple. When the gate voltage is higher than the threshold voltage, the IGBT is turned on and current can flow from the collector to the emitter. When the gate voltage is lower than the threshold voltage, the IGBT is turned off and no current can flow through it. Therefore, by adjusting the gate voltage, the IXTY1N120P can be switched on and off to regulate the current or voltage in the circuit.In conclusion, the IXTY1N120P is a high voltage IGBT with several advantages over standard IGBTs. It has a wide reverse voltage blocking capability, a fast switching speed, and a low on-state resistance. It is used in a variety of applications including motor control, power control, motor switching, and power control circuits, where it is used to control the flow of electricity. As such, the IXTY1N120P is a reliable and efficient way to regulate the current or voltage in high voltage applications.The specific data is subject to PDF, and the above content is for reference
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