IXTY08N120P Allicdata Electronics
Allicdata Part #:

IXTY08N120P-ND

Manufacturer Part#:

IXTY08N120P

Price: $ 1.93
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 1200V 8A TO-220
More Detail: N-Channel 1200V 8A (Tc) Through Hole TO-220AB
DataSheet: IXTY08N120P datasheetIXTY08N120P Datasheet/PDF
Quantity: 1000
70 +: $ 1.73880
Stock 1000Can Ship Immediately
$ 1.93
Specifications
Series: --
Packaging: Tube 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: --
Vgs(th) (Max) @ Id: --
FET Feature: --
Power Dissipation (Max): --
Operating Temperature: --
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Description

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IXTY08N120P is a power MOSFET (metal-oxide-semiconductor field-effect transistor) designed by IXYS Corporation, a semiconductor manufacturer with over 40 years of design and production expertise. It’s used in a variety of applications because it has a low on-resistance and a high peak current rating. This type of MOSFET has a single-gate structure in which a metal oxide is used as the gate oxide. It’s also known as a metal oxide semiconductor field-effect transistor, or MOSFET. As with any metal oxide semiconductor (MOS) device, an electric field formed between the metal oxide and the substrate is used to create a depletion region that controls the flow of electric current. This makes it possible for the device to have high switching speeds, low on-resistance and a high peak current rating.

The IXTY08N120P power MOSFET can be used in a variety of applications, including motor controls, battery systems, power supplies, lighting, welding and audio amplifiers. It’s also suitable for use in DC/DC converters and switching applications due to its low on-resistance and high peak current rating. Some of the other applications for this particular MOSFET include high-efficiency, high-power and high-current switching; snubbers; load disconnector; power conversion; and load switching.

One of the main advantages of the IXTY08N120P power MOSFET is that it offers a very low on-resistance as well as a high peak current rating. The MOSFET has a low gate-to-source voltage, allowing it to be used with low voltage supplies. The device also has a low input and output capacitance, allowing it to switch on and off quickly. These features make it applicable for high-speed switching applications.

The IXTY08N120P power MOSFET has a few other features that make it an attractive option for a variety of applications. It has a low saturation voltage, which means it won’t drop a lot of voltage when it’s in operation. It also has a low threshold voltage, which means it can be operated from a low voltage. This makes it suitable for applications where low voltage is required, such as battery systems. Additionally, it has a high current rating, allowing it to handle a large amount of current.

The IXTY08N120P power MOSFET is an attractive choice for a variety of applications. It offers a low on-resistance and a high peak current rating, allowing it to handle a large amount of current. It also has a low gate-to-source voltage, allowing it to be used with low voltage supplies. Additionally, it has a low input and output capacitance, allowing it to switch on and off quickly, and a low saturation voltage, making it ideal for situations where low voltage is required. With these features, the IXTY08N120P power MOSFET can be used in a variety of applications, including motor controls, battery systems, power supplies, and lighting.

The specific data is subject to PDF, and the above content is for reference

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