IXTY1R4N120PHV

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IXTY1R4N120PHV is an enhancement-mode Field Effect Transistor (FET) that is widely used in many industrial and other applications where the current, voltage, and power ratings of this type of FET are critical. The IXTY1R4N120PHV is a power MOSFET that is used for many applications including power conditioning, switching, and circuit protection. In fact, this type of FET can be used in nearly every branch of electronics.The IXTY1R4N120PHV is a single-channel FET power transistor, which means that it consists of one drain and one source, or two gates. This type of FET is commonly referred to as an N-channel FET. This type of FET is widely used because of its high current handling capabilities, low threshold voltage, and the ability to handle higher power without becoming damaged.The IXTY1R4N120PHV is an enhancement-mode FET, meaning that it will turn on when the drain and source are at the same voltage. This type of FET is generally used as a switch in circuits. When the source voltage is lower than the drain voltage, the FET will be turned on and current can flow. When the source is higher than the drain voltage, the FET will be turned off and no current can flow. This type of FET can be used in many applications, such as switching circuits and power conditioning applications, because of its ability to switch quickly.The IXTY1R4N120PHV has a voltage range of 8V to 35V and a drain current of 25A. The maximum power dissipation of this type of FET is 75W, which is much higher than most other FETs. This makes the IXTY1R4N120PHV an ideal choice for many power conditioning applications. The low on-resistance of this FET also makes it ideal for high-speed switching applications.The IXTY1R4N120PHV is also suitable for use in many medium-power applications, including motor control circuits, as well as other applications that require switching high power loads. Its low on-resistance allows it to switch high-power loads very quickly, without creating any additional power requirements. It is also capable of handling high frequencies without becoming damaged.The IXTY1R4N120PHV is an ideal choice for many applications because of its wide voltage range, low on-resistance, and reliable performance. This type of FET is widely used in industrial and other applications where the current, voltage, and power ratings of this type of FET are critical. The IXTY1R4N120PHV is easy to use and has a relatively low cost, making it a suitable choice for a variety of applications.

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