Allicdata Part #: | IXTY01N80-ND |
Manufacturer Part#: |
IXTY01N80 |
Price: | $ 1.13 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 800V 0.1A TO-252AA |
More Detail: | N-Channel 800V 100mA (Tc) 25W (Tc) Surface Mount T... |
DataSheet: | IXTY01N80 Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 1.01430 |
Vgs(th) (Max) @ Id: | 4.5V @ 25µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252AA |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 25W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 60pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 8nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 50 Ohm @ 100mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 100mA (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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IXTY01N80 is a newly-developed product in the field of single transistors and MOSFETs, where the application fields and working principles are most widely applied. This article will provide an overview of the IXTY01N80 and its related application fields and working principles.
First of all, IXTY01N80, a single transistor and MOSFET device, is mainly used in a wide range of digital circuits, as well as power circuits, control circuits, and audio circuit designs. The IXTY01N80 consists of a N-type metal-oxide-semiconductor (MOS) transistor, which is composed of two source-drain electrodes, a VGS gate electrode and a gate insulator which are all separated by a substrate. This MOS transistor also has an insulated gate, which provides a signal control terminal as well as an extended channel region. In addition, the IXTY01N80 includes a body diode in its structure which helps reduce the reverse leakage current of the device. Therefore, the IXTY01N80 is advantageous for power efficiency and reliability.
In terms of the application fields for the IXTY01N80 device, it is suitable for use in a variety of environments such as computers, phones, and other digital equipment. It can be used in digital circuits and power supplies, due to its power saving benefit, and can be used as a high-speed switching device in audio circuits. It also has excellent performance and stability in various control circuits. In addition, the IXTY01N80 device can be used as a high-efficiency power driver for a wide variety of devices. In addition, the device provides high-density and low-power operation, making it ideal for a variety of applications.
Furthermore, in terms of the working principle of IXTY01N80, it consists of two main components. The first part is the body diode which has two terminals, an anode and a cathode, and a low forward voltage drop which allows current flow in a unidirectional way. The second part is the MOS transistor which plays the role of the switch. When a gate voltage is applied to the gate terminal, the MOS transistor is turned on and allows current flow across the source and drain. As a result, the IXTY01N80 device operates like a switch that can be turned on and off by controlling the gate voltage. Furthermore, the IXTY01N80 provides an adjustable steady-state current, which can be adjusted for different applications.
To conclude, the IXTY01N80 is a newly-developed single transistor and MOSFET device for use in digital circuit, power circuits, control circuits, and audio circuit designs. Its application fields include computers, phones and other digital equipment, as well as audio circuits and various control circuits. In terms of its working principle, the IXTY01N80 consists of two main components: a body diode and a MOS transistor, which work together to provide a switch-like functionality. The IXTY01N80 also has adjustable steady-state currents which are useful for a variety of applications, and provides high-density and low-power operation.
The specific data is subject to PDF, and the above content is for reference
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