Allicdata Part #: | IXTY3N50P-ND |
Manufacturer Part#: |
IXTY3N50P |
Price: | $ 0.79 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 500V 3.6A DPAK |
More Detail: | N-Channel 500V 3.6A (Tc) 70W (Tc) Surface Mount TO... |
DataSheet: | IXTY3N50P Datasheet/PDF |
Quantity: | 1000 |
70 +: | $ 0.71001 |
Vgs(th) (Max) @ Id: | 5.5V @ 50µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252AA |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 70W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 409pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 9.3nC @ 10V |
Series: | PolarHV™ |
Rds On (Max) @ Id, Vgs: | 2 Ohm @ 1.8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 3.6A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Last Time Buy |
Packaging: | Tube |
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Integrated-gate Field-effect Transistors, usually abbreviated as IGBTs, are one of the significant components used in modern electronic circuits. They are used to control large currents in applications such as automotive, telecommunication and industrial automation. Part of the IXTY3N50P model family of IGBTs, the IXTY3N50P offers a wide range of features and advantages. This article will discuss the application field and working principle of the IXTY3N50P.
An IGBT is a type of Field-Effect Transistor (FET) that consists of two MOSFETs integrated on a single semiconductor substrate. It can be used as an electronic switch to control large currents and voltages. The IXTY3N50P is a single device that consists of an inexpensive N-Channel MOSFET and a P-Channel MOSFET. It offers a variety of features, such as low on-resistance and high switching frequencies.
The IXTY3N50P has a variety of applications in the automotive, telecommunication and industrial automation industries. In the automotive industry, it is used to switch high-power circuits for engine control, electric power steering and climate control systems. It can also be used for power amplifier applications in telecommunication systems. In industrial automation, the IXTY3N50P can be used for motor control and inverter control applications.
The IXTY3N50P is an enhancement-mode device, meaning it is normally OFF when the gate drive voltage is below the threshold voltage and is switched ON when the gate drive is greater than the threshold voltage. It uses a gate-drive voltage, ranging from -10 V to 10 V, to quickly and accurately control the ON/OFF states of the device. The device also features low on-resistance and can efficiently switch heavy loads. Additionally, it has a low reverse recovery current, which allows it to switch at higher frequencies compared to conventional transistors.
To summarize, the IXTY3N50P is a single device that consists of an inexpensive N-Channel MOSFET and a P-Channel MOSFET. It has multiple applications in automotive, telecommunication and industrial automation. It features low-on resistance, high-frequency switching capabilities, and low reverse recovery current. These features make the IXTY3N50P suitable for both consumer and industrial applications.
The specific data is subject to PDF, and the above content is for reference
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IXTY01N80 | IXYS | 1.13 $ | 1000 | MOSFET N-CH 800V 0.1A TO-... |
IXTY1N100P | IXYS | 1.21 $ | 1000 | MOSFET N-CH 1000V 1A TO-2... |
IXTY4N65X2 | IXYS | 1.21 $ | 1000 | MOSFET N-CH 650V 4A X2 TO... |
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