Allicdata Part #: | IXTY2N80P-ND |
Manufacturer Part#: |
IXTY2N80P |
Price: | $ 0.79 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 800V 2A TO-252AA |
More Detail: | N-Channel 800V 2A (Tc) 70W (Tc) Surface Mount TO-2... |
DataSheet: | IXTY2N80P Datasheet/PDF |
Quantity: | 1000 |
70 +: | $ 0.71001 |
Vgs(th) (Max) @ Id: | 5.5V @ 50µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252, (D-Pak) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 70W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 440pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 10.6nC @ 10V |
Series: | PolarHV™ |
Rds On (Max) @ Id, Vgs: | 6 Ohm @ 1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Last Time Buy |
Packaging: | Tube |
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Introduction
IXTY2N80P is a type of MOSFET (metal-oxide-semiconductor field-effect transistor), a type of transistor, which can be used for a variety of applications in electronics. Typically, transistors, like the IXTY2N80P, are small, effective, and efficient when it comes to power management. They also offer a wide range of applications in various types of technology and designs.
Application Fields for IXTY2N80P
When it comes to the application fields for which the IXTY2N80P can be used, there are a few common areas where it can be found. These include audio equipment, power supply amplifiers, power switching applications, power amplifiers, and high-frequency circuits. Additionally, these MOSFETs are often used in radio frequency circuitry, transistor operated motors, and in circuits with fast rise times.
The IXTY2N80P is most commonly used due to its low operating voltage, low ON-state resistance, high switching speed, and the ability to withstand high temperatures. This makes the IXTY2N80P an ideal choice for a wide variety of applications. Additionally, these MOSFETs are also used in electric vehicles, medical equipment, and other new technologies.
The Working Principle of IXTY2N80P
The working principle of the IXTY2N80P is based on the principle of field-effect transistors, which are used to control the flow of electrons by means of an electric field. Unlike bipolar transistors, where the current is controlled by the current gain, the current flow in FETs is controlled by the voltage applied to the gate. This difference allows FETs to offer more efficient power control.
The IXTY2N80P is a single-FET, or single-gate transistor, meaning that it requires only one input signal to make it work. The IXTY2N80P is specifically designed to allow current to flow only when a small voltage is applied to its gate terminal. When this voltage is applied, the transistors switch ON, allowing current to flow through the structure and to the output terminal. The device is then turned OFF when the voltage is removed.
The IXTY2N80P also has a high breakdown voltage, which is typically much higher than the voltage required to turn on the device. This allows the IXTY2N80P to be used in applications where a large output voltage is required. Additionally, the IXTY2N80P is designed to work efficiently in both linear and switching applications.
Conclusion
The IXTY2N80P is a single-FET MOSFET, which can be used in many different applications. It is suitable for use in audio equipment, power supply amplifiers, power switching applications, power amplifiers, high-frequency circuits, radio frequency circuitry, and more. Additionally, the IXTY2N80P is designed with a low operating voltage, low ON-state resistance, high switching speed, and the ability to withstand high temperatures. Finally, the IXTY2N80P is also designed to work efficiently in both linear and switching applications, which makes it a versatile component that can be used in a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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