IXTY01N100D Allicdata Electronics
Allicdata Part #:

IXTY01N100D-ND

Manufacturer Part#:

IXTY01N100D

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 1000V 0.1A TO-252AA
More Detail: N-Channel 1000V 100mA (Tc) 1.1W (Ta), 25W (Tc) Sur...
DataSheet: IXTY01N100D datasheetIXTY01N100D Datasheet/PDF
Quantity: 2426
Stock 2426Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: --
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.1W (Ta), 25W (Tc)
FET Feature: Depletion Mode
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 25V
Vgs (Max): ±20V
Series: --
Rds On (Max) @ Id, Vgs: 110 Ohm @ 50mA, 0V
Drive Voltage (Max Rds On, Min Rds On): --
Current - Continuous Drain (Id) @ 25°C: 100mA (Tc)
Drain to Source Voltage (Vdss): 1000V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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IXTY01N100D is a single N-channel MOSFET transistor developed by IXYS Corporation. It is one of the latest additions to the company\'s IXTRA series of MOSFETs. This series is designed for high-speed switching applications, and the IXTY01N100D is no exception. The IXTY01N100D is optimized for switching performance, offering excellent speed and power characteristics in a small package.

The IXTY01N100D is a non-enhanced N-channel MOSFET transistor, meaning that it can be easily configured for a variety of applications. Its maximum breakdown voltage of 1024 volts and a drain current capability of 5.6 A makes it suitable for use in many different types of applications. Additionally, its continuous drain current rating of 2.5 A and maximum total gate charge of 25 nC make it an ideal choice for high-speed switching applications where low power dissipation is desired.

The IXTY01N100D can be used in many different applications, such as DC/DC converters, motor control, and class-D audio amplifiers. Additionally, it is suitable for use in automotive, robotics, and other industrial applications. As the device is a MOSFET transistor, it is capable of providing fast switching and robust low-state turn on/off stability. As a result, it is well-suited for pulse-width modulation (PWM) applications and other high-speed switching applications.

The working principle of the IXTY01N100D is based on the operation of a basic MOSFET transistor. This transistor consists of three pins - gate, source, and drain. When a positive voltage is applied to the gate, the drain current will increase, and the load connected to the drain will become forward-biased and conduct. When the gate voltage is removed, the drain current will significantly decrease and the load will reverse-bias and stop conducting. This principle is the basis of the MOSFET transistor\'s operation, and the IXTY01N100D is no exception.

The IXTY01N100D is an efficient and reliable single N-channel MOSFET transistor that is designed to meet your specific needs in high-speed switching applications. Its low power consumption and excellent switching performance make it an ideal choice for applications where high speed switching is required. Furthermore, its transistor structure makes it capable of providing exceptional reliability even under the most demanding conditions. If you are looking for an efficient and reliable single-MOSFET transistor, the IXTY01N100D is a great option for you.

The specific data is subject to PDF, and the above content is for reference

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