Allicdata Part #: | IXTY64N055T-ND |
Manufacturer Part#: |
IXTY64N055T |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 55V 64A TO-252 |
More Detail: | N-Channel 55V 64A (Tc) 130W (Tc) Surface Mount TO-... |
DataSheet: | IXTY64N055T Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 25µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 130W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1420pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 37nC @ 10V |
Series: | TrenchMV™ |
Rds On (Max) @ Id, Vgs: | 13 mOhm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 64A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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Ixty64n055T belongs to the single MOSFETs category and is widely used in the manufacturing of integrated circuits, power applications and switching functions. It is an extended range N-channel MOSFET product, designed for superior power and energy management. This device combines several properties like excellent switching characteristics, good thermal performance, low voltage operation and good static drain characteristics to provide optimal efficiency for various applications.
The Ixty64n055T application field includes personal computing, consumer electronics, automotive applications, industrial applications, telecom power supplies, equipment power supplies and special power designs. It can be utilized in a wide range of low voltage based N-Channel systems, like load switch, battery management system in cell phones, power management of notebook computers and other digital circuitry.
The Ixty64n055T working principle can be understood by considering the construction of the device. It is constructed on a silicon substrate, using a standard well layout. The substrate is equipped with two N-type wells; one of them is known as the main well, while the second well is the source. N-type MOSFETs consist of an insulated gate electrode, as well as a drain and source contact region. A voltage is applied to these regions so as to control the flow of current from the source to the drain.
MOSFETs are known for their excellent switching characteristics. In order to switch it ON, a certain voltage is applied across the gate and the source region, and once the MOSFET reaches its threshold voltage, current flow from source to the drain is enabled. On the other hand, the device gets turned off when the applied voltage is decreased and once the threshold voltage is reached. This process of switching allows high speed logic operation.
The Ixty64n055T also has good thermal performance and low voltage operation as compared with other similar devices. This device operates at lower temperatures, which prevent thermal runaway in applications with high-power density. Moreover, it is able to operate at lower Voltage levels, making it ideal for use in lower voltage designs. Additionally, the static drain characteristics of this device are superior compared to other devices, ensuring that leakage current is kept to the minimum.
The Ixty64n055T is being increasingly used in a number of power applications, owing to its superior properties. This device is capable of switching ON and OFF in extremely short intervals, making it suitable for use in high-speed logic systems. Additionally, its lower temperature operation and low voltage operation make it ideal for use in low voltage systems, as well as applications with high power density. Moreover, its superior static drain characteristics ensure that there is minimum leakage current, improving the overall efficiency of the system.
The specific data is subject to PDF, and the above content is for reference
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