IXTY4N60P

The IXTY4N60P is a single P-channel power MOSFET that is ideal for use in low-power applications, such as personal computers, digital cameras and other low-end consumer appliances. It is a cost-effective solution for power supply-related components that do not require high performance, such as fast switching and high frequency applications.

The IXTY4N60P is a thermally enhanced, low-voltage MOSFET that is a direct replacement for standard low-cost BJTs. It has good channel H2 performance, with gate threshold voltage (VGS) down to -4V and has an on-resistance (RON) of 4.0 Ohms. The IXTY4N60P is well suited for a variety of linear and switching applications.

This device operates in the enhancement mode, meaning that for it to be activated, an appropriately biased voltage must be applied across its gate-source. The source is connected to the drain in order to maintain the required voltage for the gate. This will allow the flow of electrons from the source to the drain, creating a channel within the MOSFET.

The IXTY4N60P has a maximum drain-source voltage of 60V and a total gate charge of 5nC. This makes it ideal for switching applications such as load switches or phase-shift circuits. It has a low power dissipation and a low gate-drain capacitance of 1.8pF. Also, due to its low on-resistance and low power dissipation, the IXTY4N60P is well suited for load switches or phase-shift circuits.

In addition, the IXTY4N60P has a maximum junction temperature rating of 150°C, making it suitable for applications that require high-temperature operation. It also has a maximum safe operating area (SOA) of 10A and a maximum drain-source on-state resistance of 8.5mOhms.

IXTY4N60P transistors can be used in a variety of low-power, low-performance applications, including power supplies and motors. Its thermally enhanced design makes it suitable for high-temperature operation and its relatively low gate-drain capacitance makes it a good choice for switching applications. The device has an on-resistance of 4.0ohms, which makes it well suited for a variety of linear and switching applications.

In conclusion, the IXTY4N60P is a cost-effective, single P-channel MOSFET that is well suited for a variety of low-power, low-performance applications. It has a maximum drain-source voltage of 60V and a total gate charge of 5nC, which makes it ideal for switching applications. It has a low power dissipation and a low gate-drain capacitance of 1.8pF, making it suitable for high-temperature operation. Finally, its relatively low on-resistance of 4.0 Ohms makes it a good choice for both linear and switching applications.