Allicdata Part #: | MRF8HP21080HR3-ND |
Manufacturer Part#: |
MRF8HP21080HR3 |
Price: | $ 35.32 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 2CH 65V 2.17GHZ NI780-4 |
More Detail: | RF Mosfet LDMOS (Dual) 28V 150mA 2.17GHz 14.4dB 16... |
DataSheet: | MRF8HP21080HR3 Datasheet/PDF |
Quantity: | 1000 |
250 +: | $ 32.10100 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | LDMOS (Dual) |
Frequency: | 2.17GHz |
Gain: | 14.4dB |
Voltage - Test: | 28V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 150mA |
Power - Output: | 16W |
Voltage - Rated: | 65V |
Package / Case: | NI-780-4 |
Supplier Device Package: | NI-780-4 |
Base Part Number: | MRF8HP21080 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The MRF8HP21080HR3 is an RF amplifier module, which uses a high-power, high-performance silicon power MOSFET. This module is designed to be used in a variety of high-frequency amplifier applications. While the MRF8HP21080HR3 provides great power and features, the unique design of this RF amplifier module ensures optimal performance and ensures long-term reliability.
The MRF8HP21080HR3 is a high-power, high-performance silicon power MOSFET. It is designed to meet the demanding requirements of radio-frequency power amplifiers, such as those used in radio and television broadcast, mobile and military applications. The MRF8HP21080HR3 is designed for power outputs of up to 1.2kW and provides high linearity, high efficiency and low noise levels in an ultra-small package.
The main application field for the MRF8HP21080HR3 is high-power radio-frequency amplifiers and oscillators. This module is built for use in broadcast television, mobile radio, and military radio and radars. The device is well suited for the increasing demands of power efficient amplifier designs, and its unique features make it suitable for use in systems requiring high linearity and long-term stability. In addition, the MRF8HP21080HR3 is a good choice for high-efficiency oscillators due to its low noise level. The module is also popular in switching power supply applications as well.
The working principle of the MRF8HP21080HR3 is based on the fact that a MOSFET, when combined with a bipolar transistor, produces a gain in signal intensity. The signal will pass through the bipolar transistor, which is analogous to an amplifier, and will then pass through the MOSFET, thus increasing its power. The signal is then manipulated by amplifiers, modulation circuits, and buffers to produce the desired signal.
The MRF8HP21080HR3 module uses a MOSFET that is designed for high performance and efficiency. The module is designed to provide a high efficiency and low noise performance at forward power levels up to 1.2kW. The device also offers excellent linearity and stability over a wide range of temperatures, making it suitable for a variety of applications. When used in the appropriate circuit, the device is able to provide reliable and consistent performance in systems requiring high linearity, high efficiency, and low noise levels.
All in all, the MRF8HP21080HR3 is a high-performance, high-efficiency RF amplifier module that is well suited for a variety of wireless applications. This module is designed to provide high power and great features while offering excellent linearity and stability over a wide range of temperature. The device is well-suited for use in broadcast television, mobile radio, and military radio and radar applications that require high linearity, high efficiency, and low noise levels.
The specific data is subject to PDF, and the above content is for reference
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