Allicdata Part #: | MRF8P29300HSR6-ND |
Manufacturer Part#: |
MRF8P29300HSR6 |
Price: | $ 250.43 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 2CH 65V 2.9GHZ NI1230S |
More Detail: | RF Mosfet LDMOS (Dual) 30V 100mA 2.9GHz 13.3dB 320... |
DataSheet: | MRF8P29300HSR6 Datasheet/PDF |
Quantity: | 1000 |
150 +: | $ 227.66400 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | LDMOS (Dual) |
Frequency: | 2.9GHz |
Gain: | 13.3dB |
Voltage - Test: | 30V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 100mA |
Power - Output: | 320W |
Voltage - Rated: | 65V |
Package / Case: | NI-1230S |
Supplier Device Package: | NI-1230S |
Base Part Number: | MRF8P29300 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Transistors are key components to consider when designing of modern electronics, as they can be used to take advantage of the unique characteristics of semiconductor material. The MRF8P29300HSR6 is a specific type of transistor, categorized as a field effect transistor (FET), and is intended for use in RF, or radio frequency, applications. This article will examine the MRF8P29300HSR6, discuss its application fields, and explain its working principle.
Application Fields
The MRF8P29300HSR6 is a field effect transistor that is designed for use in radio frequency applications. It is specifically optimized for use in high power amplifiers and has been designed to demonstrate excellent efficiency and deliver excellent RF power saturation characteristics. Due to its advantages in these areas, it is often used in the design of RF power amplifiers for cellular communications, such as for 4G and 5G applications.
This device can also be used in applications such as FM transmitters, TV transmitters, and Amateur Radio power amplifiers. It is designed to provide excellent linearity, allowing for more efficient treatment of the input signals, thus providing higher fidelity output signals.
Working Principle
As a field effect transistor, the MRF8P29300HSR6 operates on a unique principle. This transistor is composed of four terminals, or pins, including a gate, a source, a drain, and a body. The operation of the device is based on the principle that current flowing through the source and the drain terminals is determined by the voltage applied to the gate terminal.The gate is effectively a capacitor, and when a voltage is applied to the gate, it affects the behavior of the charge carriers in the channel between the source and drain terminals. This changes the conductivity of the channel, allowing more current to flow when it is activated. As a result, the transistor acts as a switch, allowing current to flow when the gate voltage is applied, and stopping the flow when the voltage is removed.
The MRF8P29300HSR6 is fabricated using high-precision, modern fabrication techniques to ensure that the components are precisely placed and the desired electrical characteristics are achieved. This helps to ensure that the device operates as designed, with excellent linearity and power saturation characteristics.
In conclusion, the MRF8P29300HSR6 is a field effect transistor designed for use in radio frequency applications. It is optimized for use in high power amplifiers, and can be used in applications such as cellular communications and FM transmitters. The device features a unique design, with four pins including a gate, a source, a drain, and a body, which allows current to flow when a voltage is applied to the gate. The transistor is fabricated using high-precision processes, to ensure that its electrical characteristics are precisely controlled.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
MRF8S21100HSR3 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 2.17GHZ NI780S... |
MRF8S9120NR3 | NXP USA Inc | -- | 250 | FET RF 70V 960MHZ QM780-2... |
MRF8P9040GNR1 | NXP USA Inc | 11.99 $ | 1000 | FET RF 2CH 70V 960MHZ TO-... |
MRF8P9040NR1 | NXP USA Inc | -- | 1000 | FET RF 2CH 70V 960MHZ TO2... |
MRF8HP21080HR3 | NXP USA Inc | 35.32 $ | 1000 | FET RF 2CH 65V 2.17GHZ NI... |
MRF8S7170NR3 | NXP USA Inc | 48.33 $ | 1000 | FET RF 70V 748MHZ OM780-2... |
MRF8S9200NR3 | NXP USA Inc | -- | 1000 | FET RF 70V 940MHZ OM780-2... |
MRF8P9210NR3 | NXP USA Inc | -- | 1000 | FET RF 2CH 70V 960MHZ OM7... |
MRF8S18120HSR3 | NXP USA Inc | 62.35 $ | 1000 | FET RF 65V 1.81GHZ NI-780... |
MRF8P20140WHR3 | NXP USA Inc | 64.59 $ | 1000 | FET RF 2CH 65V 1.91GHZ NI... |
MRF8P20140WHSR3 | NXP USA Inc | 64.59 $ | 1000 | FET RF 2CH 65V 1.91GHZ NI... |
MRF8P20140WGHSR3 | NXP USA Inc | 64.59 $ | 1000 | FET RF 2CH 65V 1.91GHZ NI... |
MRF8S7235NR3 | NXP USA Inc | 66.77 $ | 1000 | FET RF 70V 728MHZ OM780-2... |
MRF8S9232NR3 | NXP USA Inc | 68.14 $ | 1000 | FET RF 70V 960MHZ OM780-2... |
MRF8S18210WGHSR3 | NXP USA Inc | 71.47 $ | 1000 | FET RF 65V 1.93GHZ NI880X... |
MRF8S18210WHSR3 | NXP USA Inc | 71.47 $ | 1000 | FET RF 65V 1.93GHZ NI880X... |
MRF8S9220HSR3 | NXP USA Inc | -- | 1000 | FET RF 70V 960MHZ NI780SR... |
MRF8P20165WHR3 | NXP USA Inc | 74.91 $ | 1000 | FET RF 2CH 65V 2.01GHZ NI... |
MRF8P20165WHSR3 | NXP USA Inc | -- | 1000 | FET RF 2CH 65V 2.01GHZ NI... |
MRF8S9170NR3 | NXP USA Inc | -- | 1000 | FET RF 70V 920MHZ OM780-2... |
MRF8VP13350NR3 | NXP USA Inc | 94.11 $ | 1000 | TRANS RF LDMOS 350W 50VRF... |
MRF8VP13350GNR3 | NXP USA Inc | 95.33 $ | 1000 | TRANS RF LDMOS 350W 50VRF... |
MRF8P8300HR6 | NXP USA Inc | 99.06 $ | 1000 | FET RF 2CH 70V 820MHZ NI1... |
MRF8P8300HSR6 | NXP USA Inc | 99.06 $ | 1000 | FET RF 2CH 70V 820MHZ NI1... |
MRF8VP13350NR5 | NXP USA Inc | 136.5 $ | 1000 | RF POWER LDMOS TRANSISTOR... |
MRF8P9300HSR6 | NXP USA Inc | -- | 1000 | FET RF 2CH 70V 960MHZ NI-... |
MRF8P29300HR6 | NXP USA Inc | 249.81 $ | 1000 | FET RF 2CH 65V 2.9GHZ NI1... |
MRF8P29300HSR6 | NXP USA Inc | 250.43 $ | 1000 | FET RF 2CH 65V 2.9GHZ NI1... |
MRF8372 | Microsemi Co... | 0.0 $ | 1000 | TRANS NPN 16V 200MA SO8RF... |
MRF8372G | Microsemi Co... | 0.0 $ | 1000 | TRANS NPN 16V 200MA SO8RF... |
MRF8372GR1 | Microsemi Co... | 0.0 $ | 1000 | TRANS NPN 16V 200MA SO8RF... |
MRF8372GR2 | Microsemi Co... | 0.0 $ | 1000 | TRANS NPN 16V 200MA SO8RF... |
MRF8372R1 | Microsemi Co... | 0.0 $ | 1000 | TRANS NPN 16V 200MA SO8RF... |
MRF8372R2 | Microsemi Co... | 0.0 $ | 1000 | TRANS NPN 16V 200MA SO8RF... |
MRF8372MR1 | Microsemi Co... | -- | 1000 | TRANS NPN 16V 200MARF Tra... |
MRF8S18120HR3 | NXP USA Inc | -- | 1000 | FET RF 65V 1.81GHZ NI-780... |
MRF8S18120HR5 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 1.81GHZ NI-780... |
MRF8S18120HSR5 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 1.81GHZ NI-780... |
MRF8S9100HR3 | NXP USA Inc | 0.0 $ | 1000 | FET RF 70V 920MHZ NI-780R... |
MRF8S9100HR5 | NXP USA Inc | 0.0 $ | 1000 | FET RF 70V 920MHZ NI-780R... |
FET RF 68V 2.16GHZ NI-400RF Mosfet LDMOS...
FET RF 68V 1.99GHZ TO270-4RF Mosfet LDMO...
FET RF 40V 175MHZ TO272-6 WRAPRF Mosfet ...
FET RF 65V 2.17GHZ NI780SRF Mosfet LDMOS...
FET RF 80V 1.6GHZ M243RF Mosfet LDMOS 28...
FET RF 80V 1.6GHZ M243RF Mosfet LDMOS 28...