MRF8VP13350NR5

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The MRF8VP13350NR5 is a 3.5 GHz GaAs Enhancement-Mode (normally-off) Process power MOSFET designed specifically for applications in the Digital Cellular Infrastructure, L-Band Radios, Wi-Fi, RFID, and Digital Video Broadcasting. The device has a breakdown voltage of 26 volts and drain current of 150mA. It also features low noise operation, high linearity and high gain power performance. The device offers the advantages of a wide range of operating frequencies, low distortion, high ESD immunity and excellent power handling capability.

The MRF8VP13350NR5 is designed using a High Electron Mobility Transistor (HEMT) process, which utilizes high mobility electrons for signal amplification and switching. This technology makes the device capable of achieving high frequency performance that is unmatched by any other technology in the same power class. It also combines the very low noise figure of HEMTs with the higher input impedance of a MOSFET.

The working principle of the MRF8VP13350NR5 relies on the transfer of resistance controlled by gate voltage. The gate region of the device is separated from the source and drain terminals by a very thin insulating layer. When a gate voltage is applied, an inversion layer is formed at the gate-channel boundary due to the inversely related concentration of positive ions. This causes the device to have a very high input impedance.

In addition to its high input impedance, the device has the advantage of being able to switch very quickly, making it ideal for use in high-speed switching applications. The device also has the ability to modulate the output power, making it an ideal choice for applications that require variable output power.

Furthermore, the MRF8VP13350NR5 has an integral guard ring that flanks the gate region and helps to minimize the Gate Leakage current. This feature reduces the amount of power dissipated by the device, further optimizing device performance.

The MRF8VP13350NR5 has a wide range of applications in broadcasting, digital cellular infrastructure, RFID cables, microwave antennas, base stations, and Wi-Fi applications. The device has a high electrical-to-noise figure, low output capacitance, low distortion and low insertion loss. All these features make the MRF8VP13350NR5 suitable for use in high speed, high frequency applications.

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