MRF8VP13350GNR3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The MRF8VP13350GNR3 is a high-power depletion mode Gallium Nitride (GaN) based laterally diffused metal oxide semiconductor (LDMOS), or field-effect transistor (FET). This type of FET has several distinct advantages compared to traditional silicon-based MOSFETs, including a higher breakdown voltage, higher drain efficiency, and a lower on-resistance. It is mainly used in radio frequency (RF) power amplification applications, including Local Area Networks (LANs) and personal communication systems (PCS).

The MRF8VP13350GNR3 consists of a two-layer planar structure with a GaN buffer layer between an aluminum-containing buffer layer and an doped polysilicon layer. The planar structure provides the FET with high electrical performance, allowing the device to handle high levels of power during RF transmission. The polysilicon layer provides an electrical connection to the gate, while the aluminum-containing silicon layer forms a channel between the source and drain.

The working principle of the MRF8VP13350GNR3 is based on the MOSFET principle. A voltage applied to the gate creates an electrical field across the channel, which in turn controls the amount of current flowing through the device. In depletion mode, a negative voltage is applied to the gate, which causes the channel to become narrow and reduces the conductivity between the source and the drain. Conversely, a positive voltage applied to the gate causes the channel to be wide and allows increased current to flow. This allows the FET to be used as an amplifier or switch in various RF applications.

Another advantage of the MRF8VP13350GNR3 is its high thermal stability. The GaN buffer layer increases the FET’s threshold voltage, reducing its susceptibility to thermal runaway due to self-heating. Additionally, the GaN material’s thermal conductivity allows heat to dissipate quickly, preserving the FET’s electrical performance even at high temperatures. This makes the device suitable for applications such as portable communication systems, where overheating can be a major problem.

In summary, the MRF8VP13350GNR3 is a high-power depletion mode Ghallium Nitride (GaN) based laterally diffused metal oxide semiconductor (LDMOS), or field-effect transistor (FET). It is mainly used in applications such as radio frequency (RF) power amplification, local area networks (LANs), and personal communication systems (PCS). It has excellent thermal stability due to its GaN buffer layer, making it suitable for use in applications that require high temperatures. The MOSFET principle is used to control the amount of current flowing through the device, allowing it to be used as an amplifier or switch in RF applications.

The specific data is subject to PDF, and the above content is for reference