MRF8S18210WGHSR3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The MRF8S18210WGHSR3 is a ¬25-Watt, 896-960 MHz LDMOS radio frequency (RF) power field effect transistor (FET) designed for common commercial and industrial applications. The amplet is intended for use in base station, repeater and general purpose RF power amplifier applications which operate in the 896-960 MHz frequency range.

The MRF8S18210WGHSR3 is a two-stage device consisting of an input stage with a range of 28 dB gain that produces a drive signal to a linear driver stage with 0.25 dB flat to the power amplifier stage. It also has an internally matched collector for optimal performance.

The RF transistor has a power output rating of 25 watts and a typical gain of 26.5 dB. It operates from a supply voltage of 36 V and has a collector-emitter breakdown voltage of 55 V. The device is also provided with a thermal shutdown feature. It has an integrated ESD protection circuitry that minimizes the risk of electrostatic discharge (ESD) damage.

The device has a total of three pins, with the source connected to ground and the gate and source connected to the source terminal. The drain is connected to the power supply for the device. The transistor can be used to control a variety of loads, such as antennas, amplifiers, and input circuits. The MRF8S18210WGHSR3 can also be used as a variable power amplifier for controlling the magnitude of RF signals.

The basic principle of operation of an MOSFET is the modulation of a gate voltage to control the current flow through the transistor. When the gate voltage is increased, the resistance between the drain and the source decreases, increasing the current flow. When the gate voltage is decreased, the resistance between the drain and the source increases, reducing the current flow. By varying the gate voltage, the magnitude of the RF signal can be accurately controlled.

The MRF8S18210WGHSR3 is a Robust and Efficient Device Design (REDD) type of transistor, which offers improved performance and more robust operation even in tough radio frequency environments. The transistor is designed to be integrated into a variety of power amplifying circuits, including differential amplifiers and impedance matching applications. Additionally, the device is also provided with a thermal shutdown feature, allowing the user to protect the device from over-heating.

The MRF8S18210WGHSR3 is an ideal choice for a variety of applications in the 896-960 MHz frequency range, including base station transmitters, repeaters, and general-purpose RF power amplifiers. Its high power output rating and extremely rugged construction ensure long-term reliability.

The specific data is subject to PDF, and the above content is for reference