MRF8S9100HR3

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	LDMOS
Frequency:	920MHz
Gain:	19.3dB
Voltage - Test:	28V
Current Rating:	--
Noise Figure:	--
Current - Test:	500mA
Power - Output:	72W
Voltage - Rated:	70V
Package / Case:	NI-780
Supplier Device Package:	NI-780
Base Part Number:	MRF8S9100

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MRF8S9100HR3 is an advanced high-performance field effect transistor (FET) from Motorola. It is a high-power RF MOSFET (metal-oxide-semiconductor field effect transistor) specifically designed for discrete RF power amplifier applications in the 400 – 500 MHz band. The RF MOSFET features exceptional gain, output power and efficiency performance. It also offers excellent signal fidelity, low distortion and low gate drive.The MRF8S9100HR3 is a double-side-removed (DSR) MOSFET that integrates two flat source lead fingers on each side. It is designed to be used in conjunctions with external gate termination components, such as capacitors, resistors, and baluns, in RF amplifier designs. The device is highly reliable and boasts superior yields compared to other FETs. It is also temperature stable, making it well-suited for use in temperature-sensitive applications.The device is designed to be mounted on a printed circuit board and comes in a 36-pin plastic dual leaded package with high thermal conductivity. It also has a minimum channel breakdown voltage of 9V, a maximum channel drain-source breakdown voltage of 50V, and a maximum gate-source voltage of 20V. The MRF8S9100HR3 is also reverse-biased safe-operating area (RBSOA) protected for excellent current delivery.The MRF8S9100HR3 is most commonly used in mobile applications, such as cellular phones, PDAs, and GPS systems. It is also used in high performance linear and digital television, two-way radio, microwave communication systems, and automotive audio systems. The device’s working principle involves harnessing the power of the injected electric charge from the gate terminal to control the channel between the source and drain. The current flows from the source terminal to the drain terminal, forming a continuous channel. The electric charge from the gate terminal carries information about the voltage and current conditions in the channel and it is able to control the current that flows in the channel.The electric charge injected to the channel affects the number of free electrons in the channel and the mobility of these free electrons. The number of free electrons in turn determines the state of the FET, either on (conducting current) or off (not conducting current). The mobility of these free electrons dictates the amount of current that can flow through the channel.In addition to being an excellent choice for RF applications, the MRF8S9100HR3 is also capable of providing robust and consistent performance in a wide range of conditions. It is well-suited for use in high power, high frequency, and high temperature applications.

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