Allicdata Part #: | MRF8P9210NR3-ND |
Manufacturer Part#: |
MRF8P9210NR3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 2CH 70V 960MHZ OM780-4 |
More Detail: | RF Mosfet N-Channel 28V 750mA 960MHz 16.8dB 63W NI... |
DataSheet: | MRF8P9210NR3 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | N-Channel |
Frequency: | 960MHz |
Gain: | 16.8dB |
Voltage - Test: | 28V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 750mA |
Power - Output: | 63W |
Voltage - Rated: | 70V |
Package / Case: | NI-780-4 |
Supplier Device Package: | NI-780-4 |
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The MRF8P9210NR3 N-Channel RF power MOSFET is a new generation of high-power, high efficiency solution for RF power amplifier, switch, and analog applications. Unlike the common power MOSFET which operates in either the linear or the saturation region, this device can operate in both regions at the same time.
The MRF8P9210NR3 is specially designed to operate in the microwave and millimeter-wave frequency range. It provides excellent third-order and second-order performance with low-level gate drive. It can operate with very low current levels and still maintain high output power levels.
The MRF8P9210NR3 has an application field in the microwave and millimeter-wave frequency range. It is commonly used in various RF power amplifier, switch, and analog applications. The device can be used in a wide range of commercial, government, and military applications such as frequency synthesizers, radar, point-to-point microwave, mobile radio, and satellite communications.
The working principle of the MRF8P9210N is based on the Avalanche Energy Saturation (AES) technology, which enables the device to operate with very low current levels and still maintain high output power levels and high efficiency. AES technology provides efficient power conversion and low power consumption.
In AES technology, the device operates in the avalanche gain region along with the constant reverse avalanche gain. The device can convert an input current of two or three applied volts into a higher output power level and transfer it to the load efficiently. The device can produce higher power levels than conventional power MOSFETs, with less switching losses and low thermal resistance. The device also offers high safe operating area (SOA) capability.
The MRF8P9210N also offers superior wide-band and large-signal performance along with excellent pulse response. It utilizes a low gate threshold voltage, low on-resistance, and low gate charge for improved gate drive and switching performance. Furthermore, the device operates with a low input and gate capacitance, and offers improved input-to-output isolation.
In addition, the device features low gate current, a reverse-polarity drain protection diode, an internal ESD protection diode, and a wide-range of gate drive options. This makes it an ideal solution for high-efficiency, large-signal, and high-fidelity RF applications.
Overall, the MRF8P9210NR3 is an advanced high-power, high-efficiency N-Channel RF power MOSFET. It is designed to provide excellent performance in RF power amplifier, switch, and analog applications. The device operates at low-level gate drive, utilizes AES technology for efficient power conversion, and offers superior wide-band and large-signal performance. The device also offers low gate current, reverse-polarity drain protection diode, an internal ESD protection diode, and a wide-range of gate drive options.
The specific data is subject to PDF, and the above content is for reference
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