MRF8S18120HR5

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Introduction

The MRF8S18120HR5 is a high power N-channel radio frequency (RF) MOSFET developed by Motorola. It operates at frequencies up to 1.8 GHz and provides a typical output power of 120 watts. It is designed for use in mobile communication systems such as cell phones and other wireless devices. The device offers a high breakdown voltage of 60 volts and a high current capability of 37.5 amps.

Application Fields

The MRF8S18120HR5 can be used in a wide variety of applications. It is ideal for use in base station and repeater amplifiers for cellular, PCS, LTE, and other wireless communication systems, as well as other high-power amplifier systems such as CATV. In addition, it is suitable for use in applications such as test instrumentation, power modulators, and mobile radios.

Working Principle

The MRF8S18120HR5 is a metal-oxide-semiconductor field-effect transistor (MOSFET). It uses two gates instead of the usual one found in other types of transistors. This MOSFET provides very high speed switching when compared with other types of transistors.The working principle of the MOSFET can be explained using the following diagram:The electrons are attracted to the metal gate, which creates a strong electric field. When a voltage or current is applied to the source and drain terminals, the electrons flow from the source to the drain. As the electrons move, they generate a positive charge in the metal gate, which attracts and traps the electrons. This creates a barrier between the source and the drain, which prevents further current flow. By controlling the voltage and/or current applied to the gate, the MOSFET can be used to control current flow in the device.

Conclusion

The MRF8S18120HR5 is a high power N-channel radio frequency MOSFET developed by Motorola. It operates at frequencies up to 1.8 GHz and provides a typical output power of 120 watts. It is designed for use in base station and repeater amplifiers for wireless communication systems and is suitable for a variety of other applications. The device has two gates which allow for very high speed switching. By controlling the voltage and/or current applied to the gate, the MOSFET can be used to control current flow in the device.

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