MRF8VP13350NR3

The MRF8VP13350NR3 (PN: MFRFUPP1335) is a high voltage, high power, wide band, high gain, and high frequency insulated-gate bipolar transistors (IGBTs). It has enhanced features such as better current carrying capability, high frequency stability, immunity to noise and thermal runaway, improved system performance, and low noise operation. The IGBTs are used primarily in radio frequency (RF) applications, and are available in a range of power levels and package styles.

The primary application area of the MRF8VP13350NR3 is the radio frequency (RF) power amplifier. It is ideal for applications such as UHF/VHF linear amplifiers, high-gain linear amplifiers, low-noise amplifiers, RF power amplifiers, drivers, and high-power radio transceivers. It has also been used in applications ranging from automotive radar and satellite radio to microwave ovens, GPS systems, and consumer electronics.

The working principle of the MRF8VP13350NR3 is based on the ‘voltage enabled mode’ of operation. In this mode the Tied Gate Voltage (VG) of the device is used to determine the level of the collector-emitter voltage. The Tied Gate Voltage and the collector-emitter voltage form a voltage divider; as the Tied Gate Voltage is increased, the collector-emitter voltage increases. This allows for the use of an externally adjustable Tied Gate Voltage to set the desired collector-emitter voltage.

The device is also equipped with a ‘voltage driven source’, which can be used to enhance its current carrying ability. The source is used to increase the current through the device by reducing the effective collector-emitter voltage, enabling higher current levels to be supplied.

The MRF8VP13350NR3 is available in a surface mount package, which is ideal for applications where space is limited. The device includes internal thermal and overvoltage protection, which allows for safe operation under all conditions. The device is also RoHS compliant and is certified by major regulatory bodies.

The MRF8VP13350NR3 is an extremely useful device for RF applications. It is able to provide high current levels, low noise operation and excellent thermal characteristics. The device is reliable, cost effective and is easy to install and use.