MRF8S18120HSR5

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The MRF8S18120HSR5 is a high-power gallium nitride (GaN) radio frequency (RF) power transistor designed to provide best-in-class performance in applications such as radio base station transmitters, large-scale scientific research, industrial and automotive radar and point-to-point radio links. It is ideal for large-scale power amplification in narrow to medium bandwidth applications where both high power efficiency and linearity are critical.

The MRF8S18120HSR5 features a high value-per-dollar, making it a great choice for those looking to get the most bang for their buck. Its advanced GaN technology offers superior power-handling capability, efficiency, and linearity over the traditional silicon-based RF transistor designs. Its high-power, 960-watt peak output, makes it particularly well-suited for applications that require high-power, long-term power stability, with an aging rate of less than 1.0 dB when operated up to 50 Celsius. Its exceptional linearity performance also makes it ideal for applications that require superior dynamic range or for frequency-modulated (FM) applications where phase noise is critical.

The MRF8S18120HSR5 provides an excellent choice for applications where both high efficiency and linearity performance are desired. It is capable of operating up to VDS = 50V, with a typical gate threshold voltage (VGT) of -0.7V. Its high-efficiency, single-ended Class-F power amplifier design allows it to operate with a smaller gate width than typical Class-A designs, maximizing efficiency and improving linearity at the same time. Its high-voltage maximum drain-to-source also allows operation at higher gate control voltages to improve performance.

The operation of the MRF8S18120HSR5 is based on a field-effect transistor (FET), with a depletion-mode MOSFET design. In an FET, an electric field is used to control the conductivity of a channel between two terminals. In the case of the MRF8S18120HSR5, for example, the gate voltage controls the current flowing between the source and the drain. The higher the gate voltage, the more current can flow from the source to the drain. This mechanism allows the device to be used as a switch, amplifying or attenuating the signal.

The MRF8S18120HSR5 has a broad range of application fields that include radio base station transmitters, large-scale scientific research, industrial and automotive radar, point-to-point radio links, and more. Its superior performance, combined with high efficiency and power-handling capability, makes it an ideal solution for these applications where high-power, long-term power stability is critical.

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