MRF8S18210WHSR3

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The MRF8S18210WHSR3 is an RF power LDMOS transistor designed for broadband communication applications. The device is constructed with advanced siliconcontrolled rectifier (SCR) lateral-diffused-metal-oxide-semiconductor (LDMOS) technology. It is able to deliver excellent gain, ruggedness and spectral stability. It is ideal for various applications, such as cellular base stations, cordless phone base stations, high-power amplifiers, wideband amplifier applications and Wi-Fi applications.

The application field of the MRF8S18210WHSR3 includes cellular base station applications, high power amplifiers, cordless phone base stations, Wi-Fi applications, wideband amplifier applications, base transceiver stations, Point-to-Point Radio Systems, Broadcast Radio/TV Transmitters, RF Remote Access Units, and Public Address Systems. The typical application field is well-suited for broadband radio applications, including distant stations, 3G/4G wireless networks and wide-area mobile communications.

The working principle of the MRF8S18210WHSR3 device is based on the physical properties of LDMOS which is an SCR based technology. It is an SCR technology which enables the device to work more efficiently and with more reliable long-term frequency stability. The device is operated in a Class -A type linear amplification mode.

This device is capable of delivering industry-leading performance, spectral stability and ruggedness. It is designed to operate at a supply voltage from 5 to 14 volts and can deliver up to 175 watts of output power at VGS = + 8V and POUT-2dB = 10W. The device is also capable of exhibiting excellent linearity over a large input and output power range, which results in high efficiency and low distortion.

The MRF8S18210WHSR3 is ideal for applications that require high power levels and accuracy, with extended operating temperature range, wide gain adjustment and low power consumption. It is designed to operate under a wide range of temperature, typically down to -40°C to +85°C, and over a wide frequency range, from 100 MHz to 850 MHz. The device is provided in a hermetically sealed TO-220 6L package.

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