MRF8S18120HSR3

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The MRF8S18120HSR3 is a Field Effect Transistor (FET) that is used to amplify or switch signals in wireless and other radio-frequency applications. This particular device is a Multi-Stage High Power RF FET, and is designed to operate at frequencies up to 1220MHz. It is an N-channel device with an output power capability of 450W, making it an ideal choice for high power applications. The MRF8S18120HSR3 is available in a surface mount package with a 16 Pin Dual Flat No-Lead (DFN) configuration.

The key features of the MRF8S18120HSR3 include a low On-Resistance of 18 ohms, a low Coss of 11pF, a low noise figure of 5dB, a high gain of 17dB, and a fast switching speed of 15ns. These features make the device well suited for applications such as Wi-Fi, Bluetooth, and digital television. Other applications that can benefit from the MRF8S18120HSR3 include mobile radio, amplifiers, high-speed optical transmitters and receivers, cable/satellite radio, and microwave radio.

The key specification of the MRF8S18120HSR3 includes a drain-source breakdown voltage of 60 volts, a gate-source breakdown voltage of 20 volts, a maximum drain current of 18A, a maximum drain-source voltage of 55V, and a maximum power dissipation of 450W. All of these specifications make the device particularly suitable for powerful RF applications.

The working principle of the MRF8S18120HSR3 is based on the same fundamentals as any other FET. The device operates by controlling the flow of electrons through an electrical field, which is created by an electrostatic field. The gate-source voltage controls the flow of electrons through the device and the drain-source voltage controls the amount of current that flows through the device. By controlling the gate-source and drain-source voltages, the device can amplify or switch signals depending on the application.

The MRF8S18120HSR3 is a versatile device that can be used in a variety of applications. It has excellent performance characteristics, making it ideal for high-power RF applications such as Wi-Fi, Bluetooth, and satellite radio. It is available in a convenient surface mount package, making it easy to install in any circuit design. The device also has a low On-Resistance and low noise figure, making it well suited for low-noise applications. Overall, the MRF8S18120HSR3 is an ideal choice for those looking for a powerful and reliable RF FET.

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