MRF8P20140WHR3

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	LDMOS (Dual)
Frequency:	1.88GHz ~ 1.91GHz
Gain:	16dB
Voltage - Test:	28V
Current Rating:	--
Noise Figure:	--
Current - Test:	500mA
Power - Output:	24W
Voltage - Rated:	65V
Package / Case:	NI-780-4
Supplier Device Package:	NI-780-4
Base Part Number:	MRF8P20140

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MRF8P20140WHR3 is a high power MOSFET transistor designed for high reliability and high power applications. It is a cost-effective solution for RF power applications that require wide bandwidth performance and high power handling. In addition, its low noise level, small signal gain, and superior linearity make it the ideal choice for RF power applications.This high power MOSFET transistor is used in a variety of applications. It is well-suited for switching and signal amplification applications that require a low on-state resistance (RDSS). It also finds application in radio frequency (RF) communications systems as a linear amplifier, amplifier-switches, and power combiners.The most common application for MRF8P20140WHR3 is its use as a RF power amplifier. It is ideal for applications where high radiated power is required at high frequencies. The transistor is also used in radio frequency amplifiers and transmitters, as well as adjustable gain amplifiers and combining networks.The working principle of MRF8P20140WHR3 is based on the high power MOSFET technology. The gate works as an input signal, which is used to control the current flowing through the drain and source of the device. When a signal is applied to the gate, the bias of the MOSFET modulates to create a voltage difference between the drain and source. This voltage difference increases the current across the drain and source of the device. The device is operated in the depletion mode at a specified VGS bias. This helps in maintaining stability by keeping the operating point of the device in the linear region. The device maintains its operating point according to the signal applied on the gate and the device temperature. This makes it suitable for RF power applications requiring precise control of the output power. The transistor also offers superior linearity for low-noise and low-distortion operation. It also has a high output power efficiency, which is important for operation in the radio frequency range. The device also offers a low input capacitance, which reduces the requirement for drive circuitry and increases system reliability. In conclusion, MRF8P20140WHR3 is a high power MOSFET transistor designed for high reliability and high power applications. It is well-suited for switching and signal amplification applications that require a low on-state resistance (RDSS). The device is operated in the depletion mode at a specified VGS bias, which helps in maintaining stability by keeping the operating point of the device in the linear region. The device also offers superior linearity for low noise and low distortion operation, and a high output power efficiency. The device also has a low input capacitance, which reduces the requirement for drive circuitry and increases system reliability.

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