Allicdata Part #: | MRF8HP21130HR3-ND |
Manufacturer Part#: |
MRF8HP21130HR3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 2CH 65V 2.17GHZ NI780-4 |
More Detail: | RF Mosfet LDMOS (Dual) 28V 360mA 2.17GHz 14dB 28W ... |
DataSheet: | MRF8HP21130HR3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | LDMOS (Dual) |
Frequency: | 2.17GHz |
Gain: | 14dB |
Voltage - Test: | 28V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 360mA |
Power - Output: | 28W |
Voltage - Rated: | 65V |
Package / Case: | NI-780-4 |
Supplier Device Package: | NI-780-4 |
Base Part Number: | MRF8HP21130 |
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The MRF8HP21130HR3 is a high power InGaP (Indium Gallium Phosphide) Heterojunction Bipolar Transistor (HBT). This particular device is designed for use in base station amplifiers in portable radios that operate in the 806-869MHz frequency range. The MRF8HP21130HR3 is a depletion-mode type device that is capable of delivering up to 33dB gain and up to 4 Watts of power. It is designed for use in applications such as power linear amplifiers, broadband low noise amplifiers, Frequency Modulated (FM) transmitters and Low-Noise Amplifiers (LNAs).
The MRF8HP21130HR3 is a class-E (CE) amplifier, which is a type of transistor design that utilizes two bias signals (VB1 and VB2) to ensure high efficiency operation. The two bias currents in the MRF8HP21130HR3 are independently adjustable, which allows for precise matching to simulate a resistive load. The current gain of the device is around 40dB in the operating region, although this number can vary depending on the load impedance. The current draw of the device is limited to 10ma which helps to ensure reliable operation even under extreme conditions.
The RF input signal is applied to the gate terminal of the device, and the output signal is taken from the drain terminal. The device has one internal bypass capacitor, which ensures that the RF signal is not attenuated during its passage through the transistor. The device’s maximum voltage is 20V, which is necessary to ensure that the device does not become unstable when operating at high levels. The MRF8HP21130HR3 also includes a number of other features such as a low encomity (which reduces distortion) and a high-power rating.
The MRF8HP21130HR3 is ideal for use in a wide variety of high-power RF applications, due to its high power rating, wide frequency range, low noise figure, high gain, and high-efficiency operation. It can be used in both linear and nonlinear base station amplifiers, as well as industrial and consumerapplications such as FM transmitters and Low-Noise Amplifiers (LNAs). The device can also be used for a variety of other applications, such as low-noise amplifiers for GPS and Wi-Fi systems and high-power linear power amplifiers for DCS 1800 systems.
In conclusion, the MRF8HP21130HR3 is a high power depletion-mode type InGaP HBT device, designed specifically for use in a wide variety of RF applications. The device offers high gain, wide frequency range, low distortion, and efficient operation, making it an ideal choice for applications such as linear base station amplifiers, FM transmitters, and Low-Noise Amplifiers. The device can also be used in a variety of other applications, such as GPS and Wi-Fi systems, as well as high-power linear power amplifiers for DCS 1800 systems.
The specific data is subject to PDF, and the above content is for reference
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