Allicdata Part #: | MRF8HP21130HSR3-ND |
Manufacturer Part#: |
MRF8HP21130HSR3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 2CH 65V 2.17GHZ NI780S-4 |
More Detail: | RF Mosfet LDMOS (Dual) 28V 360mA 2.17GHz 14dB 28W ... |
DataSheet: | MRF8HP21130HSR3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | LDMOS (Dual) |
Frequency: | 2.17GHz |
Gain: | 14dB |
Voltage - Test: | 28V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 360mA |
Power - Output: | 28W |
Voltage - Rated: | 65V |
Package / Case: | NI-780S-4 |
Supplier Device Package: | NI-780S-4 |
Base Part Number: | MRF8HP21130 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The MRF8HP21130HSR3 is a FET that has been designed for use in auto or wireless parallel port interfaces. As a part of the Hi Power Dual Polarity Hybrid FET series, the part offers an ultra-high linearity combined with a high power RF performance. This device is well suited for use in designing circuit boards, as well as in designing wireless networks.
The MRF8HP21130HSR3 FET covers a wide frequency range in both the 806-896 MHz and 1400-1700 MHz bands. The FET can typically handle a maximum input power of 35 dBm and is offered with a 2.15 dB noise figure. The part also features a wide range of gain levels, ranging from 6.5 dB to 15 dB, depending on the application. Additionally, the part offers an excellent RF dynamic range.
The MRF8HP21130HSR3 FET also features a high input return loss of >25 dB. This feature is important in minimizing the device\'s susceptibility to noise, an important parameter for operating in the midrange of the frequency range where many different signals can be expected. The wide bandwidth of the device also helps ensure that the distortion is minimized.
In terms of its application field, the MRF8HP21130HSR3 can be used in a variety of consumer and industrial applications. The device can be used to build high-power circuit boards, or used as part of a wireless network or telecommunication design. The device also has applications in consumer electronic products as well as automotive applications such as sensing, telematics, and home theater.
The MRF8HP21130HSR3 FET works on the principle of field effect transistors. FETs are special types of transistors that use electric fields to affect the operation of an electrical circuit. FETs work on the principle of four regions of operation wherein electrons flow from the source to the drain when the gate voltage is applied. The voltage applied to the gate depends on the required current level, and this voltage can be varied to control the electron current.
Furthermore, FETs also require a bias current to maintain their operating state. This bias current is used to adjust the operating point of the transistor and ensure its temperature stability. FETs can be used for amplifying, switching, and voltage control purposes.
The MRF8HP21130HSR3 FET is a great choice for wireless and consumer application designs. Its high-power RF performance and ultra-high linearity make it well suited for designing circuit boards or designing wireless networks, making it an excellent choice for many consumer and industrial application designs.
The specific data is subject to PDF, and the above content is for reference
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