Allicdata Part #: | MRF8HP21130HSR5-ND |
Manufacturer Part#: |
MRF8HP21130HSR5 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 2CH 65V 2.17GHZ NI780S-4 |
More Detail: | RF Mosfet LDMOS (Dual) 28V 360mA 2.17GHz 14dB 28W ... |
DataSheet: | MRF8HP21130HSR5 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | LDMOS (Dual) |
Frequency: | 2.17GHz |
Gain: | 14dB |
Voltage - Test: | 28V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 360mA |
Power - Output: | 28W |
Voltage - Rated: | 65V |
Package / Case: | NI-780S-4 |
Supplier Device Package: | NI-780S-4 |
Base Part Number: | MRF8HP21130 |
Description
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MRF8HP21130HSR5 Application Field and Working Principle
MRF8HP21130HSR5 is a high power RF fashion field effect transistor (FET) for the commercial radio frequency (RF) industry. This type of device, often referred to as a “High-Power FET” is designed to amplify signals in various kinds of RF communication equipment. This type of transistor is mainly used in RF communication equipment, such as mobile phones, wireless networks, and other similar electronic devices..The MRF8HP21130HSR5 is a RF-MDMOS type of high power FET with a voltage device capable of operating in the frequency range of 0.5 to 3.5GHz. It is composed of three parts, the gate, drain, and source. This transistor has a maximum output power of 28 Watts, an output power rating of 13 dB gain, and a drain efficiency of approximately 30 percent at different frequencies. In order to understand how MRF8HP21130HSR5 works, it is important to understand the physical properties and electronic components that make up the device. The gate of the transistor is made up of a metal oxide semiconductor (MOS) gate oxide that functions as an insulator between the gate and the silicon substrate. The drain of the transistor is composed of a drain-source diode, which passes current in the opposite direction of the gate voltage when supplying power to the device. The source is also composed of a resistance element, which helps regulate the current flowing between the gate and the drain. The MRF8HP21130HSR5 has a very high peak output power with a maximum output power of 28 Watts. This high power output allows for efficient amplification of the signal in various kinds of RF communication equipment. This type of transistor also has a high frequency range, allowing for an efficient transmission of signals. When using a MRF8HP21130HSR5, it is important to consider the noise figure, IP3 (third order intercept point), power added efficiency (PAE), and power gain in order to achieve maximum performance from the device.The working principle of the MRF8HP21130HSR5 is based on a process called Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET). This process is an electrical and thermal phenomenon that uses an electric field to control the current flow of charge carriers, or “electrons”, between the gate and the source of the device. This electrical field creates an electric potential, or a “gate voltage”, which can control the flow of current through the device.The MRF8HP21130HSR5 can be used in a variety of RF communication applications such as cellular, RFID, microwave, and other similar electronics. These transistors are also ideal for use in high-efficiency, high-power broadcast and transmission, where their ability to deliver high power in a compact size makes them ideal for use in both high- and low-power applications.In conclusion, the MRF8HP21130HSR5 is a very useful high power RF fashion field effect transistor that is used in many different areas of RF communication. The transistor is composed of the gate, drain, and source. MRF8HP21130HSR5 works by applying a gate voltage, which allows for an efficient transference of power and allows for more efficient amplification of signals. This type of transistor is also able to withstand high temperature and offers a very high peak output power and a wide frequency range. By understanding the working principle of the MRF8HP21130HSR5, users can have a better understanding of how this device functions and why it is ideal for use in different RF communication applications.The specific data is subject to PDF, and the above content is for reference
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