Allicdata Part #: | MRF8P20140WHR5TR-ND |
Manufacturer Part#: |
MRF8P20140WHR5 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 2CH 65V 1.91GHZ NI780-4 |
More Detail: | RF Mosfet LDMOS (Dual) 28V 500mA 1.88GHz ~ 1.91GHz... |
DataSheet: | MRF8P20140WHR5 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Discontinued at Digi-Key |
Transistor Type: | LDMOS (Dual) |
Frequency: | 1.88GHz ~ 1.91GHz |
Gain: | 16dB |
Voltage - Test: | 28V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 500mA |
Power - Output: | 24W |
Voltage - Rated: | 65V |
Package / Case: | NI-780-4 |
Supplier Device Package: | NI-780-4 |
Base Part Number: | MRF8P20140 |
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The MRF8P20140WHR5 is a field effect transistor (FET) that is used in radio frequency (RF) applications. It is a n-channel enhancement mode low‐noise RF device designed for use with Class C, D and E amplifiers.
The MRF8P20140WHR5 is constructed with an N-type Enhancement Mode (normally off) FET device. It is designed to operate at VDS up to 28 Volts and Id up to 150 mA. Its low input capacitance and internal gate capacitance allow it to be used in high frequency switching applications. It has a total power handling capability of 75 Watts and an operating temperature range of - 55C to +175C.
The MRF8P20140WHR5 is typically used in automotive applications such as car radios and communication devices. It can handle high power, high frequency signals in both digital and analog formats. This makes it a reliable and efficient way to handle RF signals in large applications.
The working principle behind a FET is based on the fact that a voltage applied to its gate terminal changes the conductivity of the channel connecting its source and drain terminals. Current flows from the source to the drain in an N-channel FET when a positive bias is applied to its gate terminal. When the voltage applied to its gate is reversed, the current ceases. This is known as pinch-off effect as the channel is pinched off and the current stops flowing. Hence the device acts as a switch.
The MRF8P20140WHR5 is designed with a low threshold voltage in mind and has been built to ensure that the pinch-off effect takes place fast, thereby facilitating high-speed switching. It is able to operate with low input and output capacitance due to its internal design, which helps to minimize any additional capacitance on board.
Due to its low noise, high reliability and fast switching mechanism, the MRF8P20140WHR5 is extensively used for automotive, audio, video and communication applications. It is widely used for high speed switching and data communication as it is relatively immune to electrical and environmental noise. It is also used in power supply applications and has proven to be a reliable and efficient transistor in RF applications.
The specific data is subject to PDF, and the above content is for reference
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