MRF8P20140WHSR5

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The MRF8P20140WHSR5 is a high power, high speed lateral N-channel enhancement-mode Gallium Arsenide-Phosphide Heterojunction Field Effect Transistor (GaAs PHEMT) device that functions as a rf switch. This device has a low on-resistance of 5.9 Ohm and operates up to 4GHz. It is designed and manufactured in a multi-gate, self-aligned process to obtain superior performance and great reliability.

This MOSFET device is suitable for applications such as radio front-ends, amplifiers, and low noise amplifiers and switch circuits. It is specifically designed to be used in 48V systems and offers high blocking and low on-resistance performance at higher frequencies. The aim of the design is to create a high-performance, low power, and versatile device that is optimized for a variety of rf and microwave applications.

The MRF8P20140WHSR5 works on the principle of electric field. An electric field is created when a voltage is applied across two electrodes and creates a force on a third electric charge. In this device, the electric field creates a force that is used to modulate the flow of electric current from source to drain.

The electric field is created by the aluminum oxide gate oxide layer, which is between the gate and the source and drain terminals. The gate oxide layer acts as a resistive barrier which modulates the voltage applied to the gate between “off” and “on”, thus creating a controllable channel for current to flow. When the device is “off”, no current flows, and when it is “on”, the cell pulls current, thus providing a higher current density.

The MRF8P20140WHSR5 is designed to operate up to 4GHz and provide excellent performance, low on-resistance, and high linearity. It is specifically designed for applications where high speed switching is required, such as UMTS, WCDMA and GSM cellular base stations, and can be used as a power switch in most of these applications. In addition, the device provides very low insertion loss and low return loss, which makes it an ideal choice for microwave applications. The device is also capable of handling very large current levels, up to 20mA, which makes it suitable for applications with higher power levels.

The MRF8P20140WHSR5 is a reliable, high speed rf switch that provides excellent linearity, low power consumption, and high speed switching capabilities for a wide range of rf and microwave applications. It is especially suited for applications where high speed switching is needed, such as cellular base stations. The device offers low on-resistance and high linearity performance, making it ideal for use in rf amplifier circuits and switch design. In addition, it is capable of handling very large current levels, which makes it suitable for highly power-sensitive applications. The device is highly reliable and is one of the most popular rf switch devices available.

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