MRF8P20160HR5

MRF8P20160HR5 Application Field and Working Principle

MRF8P20160HR5 is a silicon N-Channel RF power MOSFETs designed for wideband and cellular base station applications from 600 MHz to 2.2 GHz. It is mainly used in the radio-frequency power amplifier. This kind of transistors features high input impedance, low output impedance, high transitional frequency and high breakdown voltage. All these features make it quite suitable for common base technology.

Classification

MRF8P20160HR5 belongs to transistors - FETs, MOSFETs - RF.

Features and Advantage

• High input impedance, Low output impedance and High transitional frequency
• Designed for wideband and cellular applications from 600 MHz to 2.2 GHz
• High gain and efficiency
• Small size and low power dissipation

Main Application

• Wireless base stations
• Radar Station Transmitter
• Radio systems
• Antennas

Working Principle

MOSFETs are voltage-controlled transistors inferred as metal-oxide-semiconductor field-effect transistors (MOSFET). It has three terminals, drain, source and gate. Its function is to control the flow of electric current between the drain and source terminals by varying the voltage applied to the gate terminal. When the voltage applied to gate is more than the source, the gate-controller enables the current to flow from source to the drain.

For MRF8P20160HR5, it requires drain voltage of 28V and drain current of 3A to fully operational. The Dynamic On-resistance of the transistor is 0.89 Ohms which is dependent on temperature and drain-source voltage. The maximum storage temperature for this device is +175℃ and the maximum operating temperature is +150℃.

Conclusion

MRF8P20160HR5 is mainly used in the radio-frequency power amplifier and is classified in the field of transistors - FETs, MOSFETs - RF. It features low output impedance, high transitional frequency, high gain and efficiency, small size and low power dissipation. Its main application is in the wireless base stations, radar station transmitter, radio systems and antennas. The transistor works by varying the voltage applied to the gate terminal to control the electric current flowing between source and drain. The device operates best under 28V drain voltage and 3A drain current at maximum operating temperature of +150℃.