Allicdata Part #: | MRF8P20160HSR5-ND |
Manufacturer Part#: |
MRF8P20160HSR5 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 2CH 65V 1.92GHZ |
More Detail: | RF Mosfet LDMOS (Dual) 28V 550mA 1.92GHz 16.5dB 37... |
DataSheet: | MRF8P20160HSR5 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | LDMOS (Dual) |
Frequency: | 1.92GHz |
Gain: | 16.5dB |
Voltage - Test: | 28V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 550mA |
Power - Output: | 37W |
Voltage - Rated: | 65V |
Package / Case: | NI-780S-4 |
Supplier Device Package: | NI-780S-4 |
Base Part Number: | MRF8P20160 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Introduction
The MRF8P20160HSR5 is a Bare Die 100 Watt, 28 Volt Lateral N-Channel power MOSFET. This high-performance device has been designed to be used in many different types of applications and with various working principles. It is particularly popular in applications such as power supplies, RF amplifiers, mixers, and high power switching.
Application Fields
The MRF8P20160HSR5 has a variety of application fields due to its impressive performance metrics. One of the primary ones is in high power RF applications, such as RF amplifiers, mixers, and high power switches. It is also used for low noise power supplies, due to its high-current capability and low on-resistance. In addition, its low gate charge and low capacitance makes it suitable for high-speed switching applications.
Working Principle
The MRF8P20160HSR5 utilizes lateral N-Channel MOSFET technology and operates on a three terminal configuration, which includes the source, gate and drain. When a positive potential is applied to the gate terminal, electron channels open between the source and drain terminals, allowing current to flow. The current flow depends on the size of the potential applied to the gate terminal. The main advantage of this transistor is that it has a very low on-resistance, which allows for higher current flow and wattage.
Advantages
The primary benefit of using the MRF8P20160HSR5, specifically in RF applications, is the ability to reduce noise and improve the frequency response. Because of its low gate capacitance, it allows for faster switching, which can reduce timing jitter, while its low gate charge allows for a very clean and accurate signal.
In addition to this, the device can handle higher current and wattage than other standard MOSFETs and provides high power dissipation due to its low on-resistance. This can help reduce system complexity and improve overall efficiency.
Conclusion
The MRF8P20160HSR5 is a powerful and reliable tool for many different types of applications, due to its low gate charge, low capacitance, and low on-resistance. Its main strength is its ability to provide clean, accurate signals in high power RF applications. Additionally, its high power dissipation provides improved efficiency and system cost reduction.
The specific data is subject to PDF, and the above content is for reference
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