MRF8P20161HSR3

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The MRF8P20161HSR3 is part of a wide range of Field-Effect Transistors (FETs) developed and marketed by Freescale Semiconductor in the form of an N-Channel Enhancement Mode Power Metal-Oxide-Semiconductor transistor (MOSFET). This device is designed for use in RF, high power and high frequency applications in both commercial and industrial electronic applications. The device is able to handle up to 30W of continuous rated power and 5KW peak power at a 1.8GHz frequency.

The MRF8P20161HSR3 devices are capable of high performance and are suitable for a wide range of applications. These include high-speed switching and signal conditioning in microwave signal processing and in cellular phone, RF amplifier and RF modulator applications. Its other uses include high power amplifier applications in power amplifiers, and in low to medium power microwave amplifiers, such as global positioning systems (GPS). All of these applications require precise control of power levels, and the MRF8P20161HSR3 device is more than up to the task.

This device achieves its performance capabilities through its transistor technology, which is based on a vertical pin-Gate MOSFET architecture. This type of architecture offers an inherent advantage over lateral Gate MOSFETs, as the vertical pin-Gate design is capable of generating a very high current density. This results in superior performance when compared to lateral Gate MOSFETs, in terms of stability and efficiency.

The working principle involved with the MRF8P20161HSR3 device revolves around its N-Channel-controlled current characteristics. It takes advantage of the high current density possible in the vertical pin-Gate MOSFET architecture, to generate a high gain for a given amount of voltage applied to it. As the voltage on the Pin-Gate increases, the current flowing through the device also increases. This is because the higher voltage applied to the pin-gate causes a decrease in the resistance of the supply line thus allowing more current to flow through.[1]

The MRF8P20161HSR3 device is also designed with a special feature known as a “body-bias,” which is used to control the Gate-Source capacitance and improve its stability. This body-bias feature is particularly helpful in RF applications, where stability is important to maintain the signal integrity. As the Gate-Source capacitance is controlled, the power output of the device is also controlled. This helps the MRF8P20161HSR3 achieve its intended performance standards at higher frequencies.

In addition to its high current performance, the MRF8P20161HSR3 provides superior thermal efficiency. This is a result of the vertical pin-Gate architecture, which allows heat from the active region of the device to be conducted out of the package, thus allowing for improved thermal performance. The thermal management is further improved due to the use of a lowered ON-resistance RDS(on). This helps keep junction temperatures down, as well as provide greater power level stability and improve overall efficiency.

The MRF8P20161HSR3 device is used in a wide variety of applications due to its superior performance capabilities. It is capable of providing superior power and speed capabilities, while maintaining a high degree of stability. These characteristics make the device ideal for high speed, high power, and high frequency applications in a wide range of RF, cellular phone, and high power amplifier applications.

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