MRF8P23080HR5

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The MRF8P23080HR5 is a gallium-arsenide (GaAs) RF power Field Effect Transistor (FET), specially designed for wireless base station operation in the 2.3GHz band. It is one of the most widely used RF power FETs due to its high efficiency and small size.

Application Fields

The MRF8P23080HR5 is designed for use in base station applications such as WI-FI, cellular, microwave and point-to-point communication systems. It is highly suitable to use in low-power, high-efficiency solid-state amplifiers, power combiners and push-pull amplifiers, made specifically for the 2.3GHz spectral band.

Due to its high linearity and low noise, the MRF8P23080HR5 is ideal for use in direct modulation and low-noise amplifiers, combining low-noise sensitivity with high power amplification in base station amplifiers.

Working Principle

The MRF8P23080HR5 is a Gallium Arsenide RF power FET and is based on Gallium Arsenide pseudomorphic High Electron Mobility Transistors (HEMT\'s) technology with a gold-doped gate and is optimized for the 2.3GHz spectral band. The FET is a double-ended, matched device with a minimum input and output impedance of 50 Ohms.

The device achieves high-efficiency and linearity in the 2.3GHz frequency band as it is manufactured using a special gold-doped gate which ensures minimum gate-drain capacitance and loss. This ensures that the device produces high levels of harmonic suppression, low insertion loss and sharp tuning characteristics at this frequency.

The MRF8P23080HR5 is based on a pseudomorphic HEMT technology and has been designed to be linear and power-efficient with a total fluid throughput of 8 Watts. It is stabilised with a thermo-eleclric cooler, thereby achieving a maximum input/output power of more than 6W. It has a noise figure of 1.25dB and is typically limited to a gain of 15dB.

Advantages

The major advantages that the MRF8P23080HR5 provides are:

• High power output and low noise figure for maximum efficiency and performance.
• High linearity, enabling direct modulation of the device with modulation into non-linear outputs.
• Minimal input and output match characteristics, allowing the device to operate efficiently in a wide range of applications.
• Low insertions loss and superior harmonic suppression.
• Excellent temperature stability, making it suitable for use in mostly all temperature ranges.

Conclusion

The MRF8P23080HR5 is a highly efficient and linear FET that has been specifically designed for operations in the 2.3GHz frequency band. Its key features include high power output, low noise figure, high linearity and minimal input/output match characteristics. Its high efficiency and low power consumption make it an ideal choice for use in base station applications.

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