MRF8P26080HSR3 Allicdata Electronics
Allicdata Part #:

MRF8P26080HSR3-ND

Manufacturer Part#:

MRF8P26080HSR3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: FET RF 2CH 65V 2.62GHZ NI780S-4
More Detail: RF Mosfet LDMOS (Dual) 28V 300mA 2.62GHz 15dB 14W ...
DataSheet: MRF8P26080HSR3 datasheetMRF8P26080HSR3 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: LDMOS (Dual)
Frequency: 2.62GHz
Gain: 15dB
Voltage - Test: 28V
Current Rating: --
Noise Figure: --
Current - Test: 300mA
Power - Output: 14W
Voltage - Rated: 65V
Package / Case: NI-780S-4
Supplier Device Package: NI-780S-4
Base Part Number: MRF8P26080
Description

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MRF8P26080HSR3 is a high-power transistor developed by Motorola. It is a power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) specially designed for broadband, high linearity, and high power applications. It is suitable for a variety of applications, including outdoor Wireless Infrastructure, WiMAX, and Wi-Fi applications. This transistor offers outstanding linearity in the range of 8.2 GHz and an exceptionally high maximum power of 260 W. Therefore, it is an ideal choice for radio frequency (RF) base station power amplifiers, repeaters and high-performance communication systems.

The working principle of the MRF8P26080HSR3 is based on the metal oxide semiconductor field effect transistor (MOSFET) technology. MOSFETs are three-terminal devices made of metal oxide film, which is sandwiched between two metal plates forming its two terminals. A voltage applied to the gate terminal generates a field within the oxide film, which creates a barrier between the two terminals, regulating the current flow. It works in a similar manner to the bi-polar junction transistor, but it is more reliable and more efficient. The MOSFET works as a switch by controlling the current flow through the device.

The MRF8P26080HSR3 also features excellent thermal resistance. It also offers robust tunability and excellent linearity. It can handle a wide range of input frequencies and power levels. Additionally, it is small in size, making it suitable for high density installations. This transistor also has excellent stability and reliability features, making it a perfect choice for RF and high power applications.

In conclusion, the MRF8P26080HSR3 is a high-power MOSFET specially designed for RF and high power applications. It has excellent thermal resistance and robust tunability features, making it a versatile and reliable device for a variety of applications. Additionally, it has an exceptionally high maximum power of 260 W, making it suitable for a variety of applications in the communication and data processing industries. The MRF8P26080HSR3 is the perfect choice for outdoor Wireless Infrastructure, WiMAX, and Wi-Fi applications.

The specific data is subject to PDF, and the above content is for reference

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