MRF8S18260HSR5

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RF mosfets, or radio frequency metal-oxide semiconductor field effect transistors, are specialized transistors designed for use in high-frequency and radio applications. The MRF8S18260HSR5 is an advanced RF mosfet designed for use in a wide range of mobile, industrial and medical applications. It features a wide frequency range, low noise performance and low power consumption. This article will discuss the application fields and working principle of the MRF8S18260HSR5.

Application Fields of the MRF8S18260HSR5

The MRF8S18260HSR5 is a high-performance and versatile transistor capable of operating in a broad range of frequency ranges including FM, AM, GSM, CDMA, TDMA and EDGE. It is a next-generation, low-noise and low-power design optimized for cell phone applications. It is ideal for use in small-signal amplifiers, switch circuits, receivers, base-station amplifiers, integrated circuits, cellular radio systems and RF microwave systems, among others.

The transistor offers a 50 watt maximum output power across a frequency range of up to 3.3 GHz, with a noise figure of less than 1.4 dB, and it can provide a gain of up to 29 dB. It features low distortion, linear operation, and excellent intermodulation performance. It is designed with high isolation between the source and the drain, and can operate at up to 50 vDC with a drain current of up to 150 mA. The MRF8S18260HSR5 is capable of operating in temperatures ranging between -40 to +60 °C.

Working Principle of the MRF8S18260HSR5

The MRF8S18260HSR5 is a is a fourth-generation circulator-field-effect-transistor (C-FET), which is a type of controlled-source metal oxide semiconductor field-effect-transistor (MOSFET). It is composed of 4 elements: two N-channel MOSFETs, two P-channel MOSFETs, and an internal junction comprising of four individual wells. All the elements are interconnected in a mesh structure known as a circulator. The transistor works by using the controlled accumulation of charge carriers in the internal wells to reduce the threshold voltage which enables the transistor to turn on. When the gate voltage is used to increase the voltage across the channel, the transistor’s internal connections are opened and current flows from source to drain.

The output impedance of the MRF8S18260HSR5 is low due to the internal connection of four individual wells, and its gate-source capacitance is also low due to the low gate-voltage required for operation. Furthermore, the transistor features peak power and gain performance at higher frequencies which makes it ideal for use in a variety of RF applications. It also has low thermal resistance which ensures stability and reliability over temperature variations.

Conclusion

The MRF8S18260HSR5 is a specialized RF mosfet designed for use in a variety of mobile, industrial and medical applications. It offers a wide frequency range, low noise performance and low power consumption, as well as excellent linear operation and isolation characteristics. The transistor works using the controlled accumulation of charge carriers in the internal wells to reduce the threshold voltage which enables the transistor to turn on. Overall, the MRF8S18260HSR5 is an advanced, versatile and high-performance transistor that can be highly useful in many radio-frequency applications.

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