MRF8S19260HSR5

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The MRF8S19260HSR5 is a silicon N-Channel RF power MOSFET designed primarily for use in amplifiers operating in the frequency range of 2.5 to 2.7 GHz. It is manufactured using advanced silicon planar MOSFET technology, providing excellent gain linearity and broadband performance with high output power levels. This makes it an ideal choice for use in high performance systems requiring linear, low distortion, wideband signals.

The MRF8S19260HSR5 is a versatile and reliable device with exceptionally low gate-source capacitance (3.3 pF) and high switching speed. This, coupled with its medium output capacitance (6.5 pF), make it the perfect choice for applications with stringent requirements for low distortion, high switching speed, and low gate loading.

The MRF8S19260HSR5 is a surface-mount RF power MOSFET designed to operate over a wide voltage range. Its drain-source breakdown voltage is 55 V, while its operating voltage range is 2.0 to 7.0 V. With a drain-source on resistance of 6.3 Ohm and a gate-source threshold voltage of -1.5 V, the MRF8S19260HSR5 is well suited for highly efficient, low-power circuits.

The MRF8S19260HSR5 is designed for use in a variety of applications including amplifiers, transmitters, transceivers, and other circuits that require high performance and reliability. It is particularly well suited for use in communications systems, including cellular, Wi-Fi, and other broadband systems. Due to its low gate-source capacitance and medium output capacitance, the MRF8S19260HSR5 also offers good linearity, making it ideal for amplifiers with wide bandwidths and high performance requirements.

The working principle of the MRF8S19260HSR5 is relatively simple. It is an N-Channel RF MOSFET that is designed to switch between conducting and non-conducting states when subjected to a gate drive voltage. When the voltage at the gate is high, the MOSFET is in its conductive state, allowing current to flow from the source to the drain. When the gate drive voltage is lowered, the MOSFET enters its non-conductive state, which prevents any current from flowing from the source to the drain. This switching from one state to the other is what makes the MRF8S19260HSR5 particularly well suited for use in high performance, low power switching applications.

In conclusion, the MRF8S19260HSR5 is an excellent choice for use in high performance systems requiring a reliable, efficient, and linear device. Its low gate-source capacitance and high switching speed, combined with its medium output capacitance and wide voltage range, make it an ideal choice for applications with high performance requirements. In addition, its wide operating range allows it to be used in many different types of systems, including cellular, Wi-Fi, and other broadband systems.

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