Allicdata Part #: | MRF8S21100HSR5-ND |
Manufacturer Part#: |
MRF8S21100HSR5 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 65V 2.17GHZ NI780HS |
More Detail: | RF Mosfet N-Channel 28V 700mA 2.17GHz 18.3dB 24W N... |
DataSheet: | MRF8S21100HSR5 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Discontinued at Digi-Key |
Transistor Type: | N-Channel |
Frequency: | 2.17GHz |
Gain: | 18.3dB |
Voltage - Test: | 28V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 700mA |
Power - Output: | 24W |
Voltage - Rated: | 65V |
Package / Case: | NI-780 |
Supplier Device Package: | NI-780 |
Base Part Number: | MRF8S21100 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The MRF8S21100HSR5 is an RF device that is based on Field-Effect Transistor (FET) technology, using an advanced silicon MOS architecture. It is compatible with many popular wireless standards, including High Speed Wi-Fi (IEEE 802.11ac). This device is optimally suited for use as an amplifier and switch in applications requiring high speed, low noise, and high linearity.
The MRF8S21100HSR5 features a low noise figure (NF) of <8 dB typical and a high linearity, making it ideal for use in applications that require reliable operation at high input power. Its balanced input/output impedance of 50Ω also allows for a more consistent power transfer from the source to the load. Additionally, the device is rated for up to 28V and has a maximum drain/source resistance of 2.3Ω, making it suitable for a range of applications, including power amplifiers.
The RF device utilizes a unique gate drive design, allowing for easy control of the device with minimal circuit complexity. This feature effectively reduces the power consumption of the device and makes it suitable for use in portable or mobile applications. Additionally, the advanced Silicon MOS technology facilitates fast switching speeds, making it desirable for applications requiring quick response times.
In operation, the MRF8S21100HSR5 tunnel diode is biased by an external circuit. When the bias voltage exceeds a certain threshold, a semiconductor-based tunnel diode is triggered, allowing current to pass through the device. The bias circuit is designed to minimize input capacitance to ensure effective and consistent operation in high frequency circuits.
The MRF8S21100HSR5 is an ideal choice for high power amplifier and switch applications, such as broadband applications including GPS, Wi-Fi, cellular, and W-CDMA, as well as aerospace/defense applications. It is also ideal for use in small outlet applications for home networks and VoIP. Additionally, the device is designed to be compatible with many popular wireless protocols, making it suitable for a wide range of applications.
The MRF8S21100HSR5 is a reliable and efficient solution for high power and high frequency applications. Its low noise figure, high linearity, and low capacitance make it an ideal choice for many wireless applications. Additionally, its low power consumption and fast switching speeds make it a great choice for portable and mobile applications, as well as for small network applications.
The specific data is subject to PDF, and the above content is for reference
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