| Allicdata Part #: | MRF8S21200HR5-ND |
| Manufacturer Part#: |
MRF8S21200HR5 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | NXP USA Inc |
| Short Description: | FET RF 2CH 65V 2.14GHZ NI1230H |
| More Detail: | RF Mosfet LDMOS (Dual) 28V 1.4A 2.14GHz 18.1dB 48W... |
| DataSheet: |  MRF8S21200HR5 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Transistor Type: | LDMOS (Dual) |
| Frequency: | 2.14GHz |
| Gain: | 18.1dB |
| Voltage - Test: | 28V |
| Current Rating: | -- |
| Noise Figure: | -- |
| Current - Test: | 1.4A |
| Power - Output: | 48W |
| Voltage - Rated: | 65V |
| Package / Case: | NI-1230 |
| Supplier Device Package: | NI-1230 |
| Base Part Number: | MRF8S21200 |
Description
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The MRF8S21200HR5 is a laterally diffused metal-oxide semiconductor Field Effect Transistor (LDMOSFET). It is ideal for use in wide bandwidth applications that require reliability and low noise. It is a retrograde channel enhancement mode High Power Medium Frequency N-Channel Enhancement Mode FET. The MRF8S21200HR5 is a level of the advanced power semiconductor family offering outstanding RF performance and the lowest standard capacitance values among other similarly sized devices. This provides excellent low-noise performance, high power and high linearity in a wide operating temperature range of -40°C to 125°C.The MRF8S21200HR5 is designed for power amplification in the medium-frequency (RF) range and could be used in applications such as mobile phone base stations, wireless modems, wireless infrastructure and telemetry systems. It delivers great performance, a broad range of gain and linearity, high efficiency and low noise over a wide frequency range (20MHz to 1000MHz).MRF8S21200HR5 is available in TQFN, PFQFN and CFQFN packaging and offer excellent low-noise performance, high power and high linearity in a wide operating temperature range of -40°C to 125°C. The TQFN package is suitable for high-density mounting in surface-mount and is optimized for extremely high performance, compared to other package types. The PFQFN and CFQFN packages offer a low-profile, space-saving solution.The MRF8S21200HR5 working principle involves two components, a source and a drain. In between these two components is the Gate which controls the flow of electrons and holes of the FET. To turn the device on requires the voltage of the Gate to be higher than the voltage of the Source. This allows the electrons to go through the device, resulting in a drained current. In order to turn the device off, the voltage of the gate needs to be lower than the Source voltage. This creates a depletion region between the Source and the Drain which blocks the current flow.The MRF8S21200HR5 is the perfect choice for high performance and wide dynamic range applications. It offers enhanced dynamic range and improved reliability, making it ideal for telecom and WiFi systems. The device is optimized for high efficiency and low noise over a wide temperature and frequency range. It also features excellent low thermal resistance and is well-suited for use in highly sensitive and reliable applications.Overall, the MRF8S21200HR5 is an excellent choice for power amplification in the medium frequency range and is widely used in various applications such as mobile base stations, wireless modems, wireless infrastructure, telemetry systems and more. It offers excellent performance and can be used in applications needing high efficiency and low noise.
The specific data is subject to PDF, and the above content is for reference
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