MRF8S23120HR5

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The MRF8S23120HR5 is an enhancement-mode power field effect transistor (FET) specifically designed for the ISO 9001: 2000 compliant discriminating commercial applications. This advanced FET is designed for use in various RF power amplifiers, cellular and broadband systems.

MRF8S23120HR5 Application Field

The MRF8S23120HR5 is designed for use in low to medium power applications. The 10V Operating voltage tolerance makes this transistor suitable for use as a driver in a variety of circuits. The high current design allows this transistor to be used as a buffer in linear circuits. The device is also suitable for use in low noise amplifiers and power linear amplifiers.

MRF8S23120HR5 Working Principle

The MRF8S23120HR5 is an enhancement-mode FET with a unique feature. The device consists of a silicon-based channel that has been “enriched” with aluminum to create an active sizeless device. Each device has two silicon gates, a source and a drain. When a sufficient voltage is applied to the gates, electrons flow between the source and drain and create an electric current. This current is used to control the device and is typically used for amplification.

The Gates of the MRF8S23120HR5 are designed to allow electrons to flow freely when the correct/appropriate voltage is applied to the input. Electrons flow from the source to the drai, creating a gain in voltage difference, voltage amplification. This voltage gain can be adjusted by adjusting the voltage levels at the gates to increase or decrease the flow of electrons.

The MRF8S23120HR5 has other desirable features, such as high frequency operation, low noise operation, low distortion, low power consumption, and low capacitance. Additionally, the device is designed to meet the requirements of many applications such as high performance communications, audio, video, microwave and optical systems.

Conclusion

The MRF8S23120HR5 is an advance. In addition to its excellent power performance, the device also provides spatial tolerance and high frequency response.The device is suitable for use in transceiver applications, power amplifiers, power linear amplifiers, and higher frequency applications.

The MRF8S23120HR5 is an excellent choice for RF power amplifiers and other applications requiring low noise and low distortion. The 10V operating voltage tolerance allows the device to be used as a driver in a variety of circuits. The device also offers excellent capacitance and current handling performance.

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