Allicdata Part #: | MRF8S23120HSR3-ND |
Manufacturer Part#: |
MRF8S23120HSR3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 65V 2.3GHZ NI-780S |
More Detail: | RF Mosfet LDMOS 28V 800mA 2.3GHz 16dB 28W NI-780S |
DataSheet: | MRF8S23120HSR3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | LDMOS |
Frequency: | 2.3GHz |
Gain: | 16dB |
Voltage - Test: | 28V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 800mA |
Power - Output: | 28W |
Voltage - Rated: | 65V |
Package / Case: | NI-780S |
Supplier Device Package: | NI-780S |
Base Part Number: | MRF8S23120 |
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MRF8S23120HSR3 is a model name for a MOSFET that belongs to the RF Transistor family. It is a three-terminal device, meaning that it has two source terminals and one drain terminal. The use of MOSFETs in RF transistors is to reduce the noise generated and increase the performance of the circuit, while providing higher switching speed.
The MRF8S23120HSR3 is a N-channel enhancement-mode device. This means that current will only flow between the source and drain when a certain concentration of electrons is present. This concentration is referred to as the “threshold”, or VTH. When the voltage applied at the gate exceeds the threshold voltage, then a conduction channel is created and current can flow between the source and the drain.
The MRF8S23120HSR3 is often used in applications where high frequency signals needed to be amplified. This device is also used to switch signals between different frequencies. As such, this device is commonly used in radio frequency applications such as wireless network systems, cellular telephone applications, radio receivers and transmitters. The device is also used in radar systems, medical imaging systems, security and surveillance systems and industrial communication systems.
The way that the MRF8S23120HSR3 works is by passing a high-frequency signal through the gate terminal that creates an electric field. This electric field causes electrons to be propelled by electrostatic forces and accumulate on the drain and source terminals. This flow of electrons is what creates the current and voltage needed to power the circuit.
The device is designed with a very low on-state resistance. This parameter is important in RF applications, as it dictates how much of the signal is lost when passing through the device. The low on-state resistance of the MRF8S23120HSR3 ensures that the signal is not significantly attenuated when passing through the transistor.
The MRF8S23120HSR3 is also optimized for high frequency signals of up to 1GHz. This is necessary in order to maintain the signal integrity when transmitting high frequency signals. The device is also designed to operate efficiently over a wide temperature range.
In summary, the MRF8S23120HSR3 is a three-terminal device that belongs to the RF Transistor family. It is designed with a very low on-state resistance and is optimized for high frequency signals of up to 1 GHz. The device is often used in applications where high frequency signals need to be amplified and to switch signals between different frequencies. It is used in radio frequency applications such as wireless networks, cellular phones, radio receivers and transmitters, radar systems, medical imaging systems, security and surveillance systems, and industrial communication systems.
The specific data is subject to PDF, and the above content is for reference
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