Allicdata Part #: | MRF8S23120HSR5-ND |
Manufacturer Part#: |
MRF8S23120HSR5 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 65V 2.3GHZ NI-780S |
More Detail: | RF Mosfet LDMOS 28V 800mA 2.3GHz 16dB 28W NI-780S |
DataSheet: | MRF8S23120HSR5 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | LDMOS |
Frequency: | 2.3GHz |
Gain: | 16dB |
Voltage - Test: | 28V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 800mA |
Power - Output: | 28W |
Voltage - Rated: | 65V |
Package / Case: | NI-780S |
Supplier Device Package: | NI-780S |
Base Part Number: | MRF8S23120 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The MRF8S23120HSR5 is an N-channel enhancement-mode silicon field-effect transistor (FET) designed for use in high frequency, low-noise, linear, and high-efficiency amplification applications below 1GHz operating frequencies. It has very low noise figure, high gain, and high linearity, making it ideal for radio frequency (RF), microwave, and millimeter wave amplification applications. This transistor can operate up to 175°C and can handle high power up to 50 W. It also features very low gate-source capacitance, short gate-source delays, and good efficiency. The device utilizes the latest advanced process technology featuring ultra-low gate-source capacitance and low gate-source delays providing a transistor for excellent linearity performance. In addition, the MRF8S23120HSR5 has wide battery voltage and temperature range, making it suitable for a variety of operating environments.
The MRF8S23120HSR5 is ideal for applications such as low noise amplifiers (LNAs), intermediate frequency (IF) amplifiers, on/off power amplifiers (PAs) in mobile radio, and linear drivers in CDMA systems. It is also suitable for general purpose amplifiers,Wideband amplifiers,Mixers,oscillators,Ka-band amplifiers,low noise amplifiers,and microwave applications.
This innovative device is based on an N-channel enhancement mode FET having a drain to source voltage rating (VDS) of 18V, typical gate-source voltage rating (VGS) of -2V, and drain current rating (ID) of 12A. It is an ideal choice for low noise amplifiers (LNAs) and other high power amplification applications that require linearity and low noise figure. It features a typical conversion gain of 24dB across a frequency range of 824-894MHz. It has a low noise figure of 0.8db and very low IIP3 (Input Third-Order Intercept Point) of 19.5 dBm.
The working principle of the MRF8S23120HSR5 is based on the phenomenon of current flow through a semiconductor material when a controlled or prescribed voltage is applied to it. An FET consists of a thin layer of P-type or N-type semiconductor material known as an active channel between two metal contacts, the source and the drain. A gate electrode is placed on top of the active channel with an insulation layer between them. The channel is formed by introducing N-type semiconductor material into the P-type material, making the FET an "N-channel" type FET. By applying a negative voltage to the gate electrode, the channel is “pinched off” and current cannot flow through it. By applying a positive voltage to the gate electrode, a channel is formed allowing current to flow through the channel as well as between the source and the drain of the FET. As the voltage is increased, the current flow increases exponentially.
The MRF8S23120HSR5 is the perfect choice for applications that require high efficiency and low noise figure. The exceptionally low gate-source capacitance and short delay time make it highly efficient, while the high power capability and wide operating temperature range make it suitable for many different applications. The low output impedance and low noise figure make it an ideal choice for high frequency, linear, and efficient amplifications in the range of 824-894MHz. The advanced process technology also provides better thermal stability, improved speed of operation, and higher linearity. All these features make the MRF8S23120HSR5 the ideal choice for various high frequency, low-noise, linear, and high-efficiency amplification applications.
The specific data is subject to PDF, and the above content is for reference
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