Allicdata Part #: | MRF8S26060HR5-ND |
Manufacturer Part#: |
MRF8S26060HR5 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 65V 2.69GHZ |
More Detail: | RF Mosfet LDMOS 28V 450mA 2.69GHz 16.3dB 15.5W NI-... |
DataSheet: | MRF8S26060HR5 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | LDMOS |
Frequency: | 2.69GHz |
Gain: | 16.3dB |
Voltage - Test: | 28V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 450mA |
Power - Output: | 15.5W |
Voltage - Rated: | 65V |
Package / Case: | NI-400-240 |
Supplier Device Package: | NI-400-240 |
Base Part Number: | MRF8S26060 |
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MRF8S26060HR5 is a silicon RF MOSFET transistor that is packaged in a power metal-oxide-semiconductor field-effect transistor (MOSFET) package and is rated at 60 volts and 260 watts. This transistor is designed for use in high-power radio frequency (RF) applications. It is a enhancement-mode MOSFET that is optimized for low-noise design. The device is capable of providing a high gain and a wide linear operating range with a superior breakdown voltage.
A power MOSFET is a type of field-effect transistor (FET) that is designed to function as an electrical switch. It is ideal for applications that require high current capacity and efficiency. MOSFETs are preferred for RF applications in which high power levels, high operating frequencies, high linearity, and low-power switching are needed. This transistor is especially well-suited for use in applications that require a combination of high-frequency performance, high gain, low noise, and high peak RF power.
The MRF8S26060HR5 uses a Si-Carbide (SIC) construction that provides a low on-resistance, high-gain and low-switch noise. It features a die-bonded gate construction that is designed to be electrically insulated from the substrate. This allows it to operate at higher frequencies than conventional MOSFETs. The device also features high-efficiency operation and can switch between different states quickly, reducing losses.
The working principle of the MRF8S26060HR5 is the same as that of any other MOSFET. It is based on the application of voltage to the gate to create an electric field which polarizes the source and drain regions. This creates a channel between them, allowing conduction of electrons. As the voltage is increased, the channel widens and more electrons can pass through.
MRF8S26060HR5 is an ideal choice for RF applications because of its high RF power rating and its wide linear operating range. The device can be used in a variety of applications, including power amplifiers, radio receivers, transmitters, signal processing circuits, and more. Its high linearity and wide operating range make it a great solution for applications requiring low noise, high power, and low distortion.
In conclusion, the MRF8S26060HR5 is an excellent MOSFET for RF applications. Its high RF power rating, wide linear operating range, and low on-resistance make it ideal for high-power radio-frequency circuits. Its die-bonded gate construction increases the frequency range of the device and its high efficiency operations reduce power losses. All of this makes the device an excellent choice for a variety of RF applications.
The specific data is subject to PDF, and the above content is for reference
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