MRF8S26120HR3

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	LDMOS
Frequency:	2.69GHz
Gain:	15.6dB
Voltage - Test:	28V
Current Rating:	--
Noise Figure:	--
Current - Test:	900mA
Power - Output:	28W
Voltage - Rated:	65V
Package / Case:	NI-780
Supplier Device Package:	NI-780
Base Part Number:	MRF8S26120

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The MRF8S26120HR3 is an RF power Field Effect Transistors (FET). RF power FETs are quickly becoming the component of choice for use in 100 watt continuous wave, or CW, and pulsed applications in the 26 to 28 GHz range, owing to their high power capability, broad bandwidth range and low cost. The MRF8S26120HR3 one such component, designed to provide a high level of power handling capability.The MRF8S26120HR3 is designed to be employed in high-frequency, radio-frequency (RF) amplifiers, as well as in low-noise-figure, Class-A amplifiers, such as in cellular communication systems, and other microwave applications. In addition, it can be useful in power amplifiers for E-Band systems and for VSAT applications.The MRF8S26120HR3 is manufactured using an epitaxial planar, aluminium gallium arsenide (AlGaAs) process and consists of a single, MOS channel transistor designed for operation in the 26 to 28 GHz range. The device is rated at a maximum of 150 watts peak output power, while offering excellent gain, power-added and power-added efficiencies, and low noise figure values.The MRF8S26120HR3’s high-frequency performance is provided through a two-stage circuit layout, which consists of an input stage, a drain amplifier and a buffer stage. This allows the device to be designed for operation in the 26-28 GHz frequency range and offers exceptional performance is required for ultra-high frequency (UHF) applications.The MRF8S26120HR3 is able to achieve high-power performance due to its low parasitic capacitance, allowing it to provide superior gain and power-added efficiency. The device also features a low gate feed-forward resistance and a high dynamic resistance, enabling it to deliver superior power handling capability. Furthermore, the device’s input/output matching circuit aids in providing excellent noise figure values, allowing it to provide better dynamic range.The MRF8S26120HR3 is widely considered to be a very efficient RF power device, offering superb high-frequency performance. Its superior thermal characteristics, low gate feed-forward, and high dynamic resistance all make it an ideal choice for applications in the high-power and high-frequency range. It is also ideal for use in low-noise-figure, Class-A amplifiers, cellular communication systems, and E-Band systems.

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