MRF8S26120HSR3

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The MRF8S26120HSR3 is a RF (Radio Frequency) LDMOS (laterally diffused metal-oxide semiconductor) amplifier that is best suited for use in low power portable communication systems. It is used in a variety of portable applications like Cellular Radio & WLAN, GPS Tracking Devices and GSM/GPRS modems. This device is an excellent choice for lower power and high frequency applications. Its unique design makes it perfect for low power and high frequency applications.

The MRF8S26120HSR3 is a N-channel laterally diffused metal-oxide semiconductor (LDMOS) RF power amplifier. It operates over a wide frequency range of 600 MHz to 6 GHz. This device can support output power levels from +20 dBm up to +27 dBm as determined by its associated amplifier framework. It is classified as a pulsed LDMOS MOSFET.

The MRF8S26120HSR3 provides very low voltage operation, low thermal resistance and low noise. It has the preferred device for high speed applications. It is designed to withstand up to +27 dBm CW (continuous wave) and +35 dBm peak output power. It has an excellent power 1 dB compression point of +33 dBm and an impressive gain flatness of +/-2 dB.

The MRF8S26120HSR3 is an excellent candidate for use in ultra-high frequency (UHF) applications. Due to its low voltage operation and small footprint, it is suitable for use with battery powered portable hand-held wireless devices. It offers excellent noise performance and has very competitive power consumption when compared to other competitive components in the same application field.

The working principle of the MRF8S26120HSR3 is based on the LDMOS MOSFET architecture. The semiconductor is designed to utilize two separate transistors arranged in parallel. The devices are designed to support up to +35 dBm of peak output power, as such each device is optimized for a different frequency range and gain performance. The proprietary semiconductor design provides excellent dynamic performance with wide instantaneous bandwidth and wide frequency range support.

The device is designed to operate over the entire UHF band (450-860 MHz) with excellent linearity, allowing for excellent sensitivity. It has a high input impedance and low feedback levels, making it well suited for portable battery powered applications, such as cellular radio and WLAN systems. Furthermore, it has an excellent noise figure of less than 1.5 dB with a 3rd order intercept point of +33 dBm.

The device is also very efficient, offering considerable power savings during peak output power levels over its competitors. Thus, the MRF8S26120HSR3 is ideal for applications such as cellular radio and WLAN systems, which require high linearity and efficiency with moderate power levels.

In summary, the MRF8S26120HSR3 is an ideal solution for low power and high frequency applications. It is designed to support up to +35 dBm of peak output power, provide excellent linearity and efficiency and offer low current consumption for portable hand-held wireless devices. It is suitable for a variety of applications, including cellular radio and WLAN systems. It is also an economical component for any system requiring RF switching and amplification in the UHF band.

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