MRF8S26120HSR5

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The MRF8S26120HSR5 is a high-power N–Channel field effect transistor (FET) suitable for a wide range of applications. The device operates in the higher frequency range and is designed to provide excellent power amplification in industrial and consumer radio frequency (RF) applications.

The MRF8S26120HSR5 offers excellent gain, linear operation, and low noise performance. The device has a 150 W peak power dissipation and is available in a plastic package with the following dimensions: 7.6 × 4.4 × 2.2 mm. The operating temperature range is from -40 to 85°C. The device has a specified power input of 25 dBm, with a drain-source breakdown of 29.2 V.

The MRF8S26120HSR5 has two different gate-drain voltage limits, VGS and VGS(max). VGS is the voltage applied between the gate lead and the source lead of the transistor. VGS(max) is the maximum voltage that may safely be applied to the gate lead. If the voltage is higher than the VGS(max) rating, it can cause permanent damage to the device.

The device works by controlling the current flow between the gate and drain of a FET through the voltage difference between the gate and source leads. It can be used in different types of circuits such as switching, linear and amplification tasks. The device’s dynamic drain resistance profile and low gate-to-drain capacitance makes it suitable for use in RF amplifiers.

It can also be used in RF switches by providing controllable switching action and low insertion loss. The device also wide range of applications such as cellular base-station amplifiers, automotive amplifiers, satellite control systems, FM and high band transmission systems, and multi-channel transmitters.

The MRF8S26120HSR5 has excellent thermal stability and constant output power over the operating temperature range providing superior reliability in RF power transistors. It is also built with a high-temperature process which is capable of achieving temperatures of up to 175oC, providing superior performance and higher power dissipation.

The device also improves resistance to harmonic distortion and performs with a low gate-drain capacitance providing good stability and high frequencies. The device also features a high drain-source voltage, of up to 30V, enabling it to operate in higher power circuits.

The MRF8S26120HSR5 is an ideal for a wide range of applications requiring high-power, low-noise, linear performance. The device is built with the latest technologies and is capable of handling high power, high frequencies and high temperatures with great reliability.

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