Allicdata Part #: | MRF8S9100HSR3-ND |
Manufacturer Part#: |
MRF8S9100HSR3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 70V 920MHZ NI-780S |
More Detail: | RF Mosfet LDMOS 28V 500mA 920MHz 19.3dB 72W NI-780... |
DataSheet: | MRF8S9100HSR3 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | LDMOS |
Frequency: | 920MHz |
Gain: | 19.3dB |
Voltage - Test: | 28V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 500mA |
Power - Output: | 72W |
Voltage - Rated: | 70V |
Package / Case: | NI-780S |
Supplier Device Package: | NI-780S |
Base Part Number: | MRF8S9100 |
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The MRF8S9100HSR3 is a high-power RF transistor which is mainly used in the wireless communication industry, especially in radio broadcasting, navigation, and wireless solutions for industrial markets. It can be used for amplifier stages in transmitters, as well as for linear, pre-amplifier, and broadband applications in radio and television broadcast systems. It is designed to provide excellent power gain and excellent distortion performance. This device utilizes a rugged and reliable HSR3 Silicon structure and is designed to endure high power operation in the RF range.
The MRF8S9100HSR3 is a 200V, 28.5A high-power transistor which features an improved output power and efficiency compared to other transistors in the same range. It has a wide frequency range, with a maximum output power of 140W at 2GHz, and a nominal gain of 16dB. This device has a low gate leakage current, making it suitable for gate-drive applications. It also has a high reverse current resistance, and a high reverse thermal resistance, making it capable of withstanding high power operation in harsh environmental conditions.
The working principle of the MRF8S9100HSR3 is based on the field effect operation of the MOSFET device. The device consists of several MOSFET elements which form the source and drain regions of the device. A voltage applied to the gate is used to control the current flow in the device, which is determined by the device\'s drain-source resistance. In the MRF8S9100HSR3, the drain-source resistance is very low, allowing for high poweroutput with low distortion.
The MRF8S9100HSR3 is designed for use in a wide variety of applications, including transmitters, linear amplifiers, broadband amplifiers and pre-amplifiers for radio and television broadcast systems. It is ideal for use in radio broadcasting, navigation, and wireless solutions for industrial markets. It utilizes a rugged and reliable HSR3 Silicon structure and is designed to endure high power operation in the RF range.
In conclusion, the MRF8S9100HSR3 is a high-power RF transistor which offers excellent power gain, efficiency, and distortion performance. It is ideal for use in radio broadcasting, navigation, and wireless solutions for industrial markets, as well as for amplifier stages in transmitters, linear amplifiers, and broadband amplifiers in radio and television broadcast systems. This device utilizes a rugged and reliable HSR3 Silicon structure and is designed to endure high power operation in the RF range.
The specific data is subject to PDF, and the above content is for reference
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